BC817-16LT1G

© Semiconductor Components Industries, LLC, 1997
October, 2016 − Rev. 15
1 Publication Order Number:
BC817−16LT1/D
BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
Features
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
CEO
45 V
CollectorBase Voltage V
CBO
50 V
Emitter − Base Voltage V
EBO
5.0 V
Collector Current − Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
SOT−23
CASE 318
STYLE 6
1
2
3
1
6x M G
G
6x = Device Code
x = A, B, or C
M = Date Code*
G = Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
www.onsemi.com
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 10 mA)
V
(BR)CEO
45 V
CollectorEmitter Breakdown Voltage
(V
EB
= 0, I
C
= 10 mA)
V
(BR)CES
50 V
EmitterBase Breakdown Voltage
(I
E
= 1.0 mA)
V
(BR)EBO
5.0 V
Collector Cutoff Current
(V
CB
= 20 V)
(V
CB
= 20 V, T
A
= 150°C)
I
CBO
100
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mA, V
CE
= 1.0 V) BC817−16, SBC817−16
BC817−25, SBC817−25
BC817−40, SBC817−40
(I
C
= 500 mA, V
CE
= 1.0 V)
h
FE
100
160
250
40
250
400
600
CollectorEmitter Saturation Voltage
(I
C
= 500 mA, I
B
= 50 mA)
V
CE(sat)
0.7 V
BaseEmitter On Voltage
(I
C
= 500 mA, V
CE
= 1.0 V)
V
BE(on)
1.2 V
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
100 MHz
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
C
obo
10 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device Specific Marking Package Shipping
BC817−16LT1G
6A
SOT−23
(Pb−Free)
3000 / Tape & Reel
NSVBC817−16LT1G
BC817−16LT3G
10,000 / Tape & Reel
SBC817−16LT3
BC817−25LT1G
6B
SOT−23
(Pb−Free)
3000 / Tape & Reel
SBC817−25LT1G
BC817−25LT3G
10,000 / Tape & Reel
SBC817−25LT3G
BC817−40LT1G
6C
SOT−23
(Pb−Free)
3000 / Tape & Reel
SBC817−40LT1G
BC817−40LT3G
10,000 / Tape & Reel
SBC817−40LT3G
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
www.onsemi.com
3
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
10.10.010.001
0.01
0.1
1
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1
V
CE
= 1 V
150°C
−55°C
25°C
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.7
1.1
V
CE
= 5 V
150°C
−55°C
25°C

BC817-16LT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 50V NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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