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MT18KSF1G72AZ-1G4D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
4GB, 8GB (x72, ECC, DR) 240-Pin DDR3L UDIMM
DRAM Operating Conditions
PDF: 09005aef83cd9e75
ksf18c512_1gx72az.pdf - Rev. J 10/15 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision K)
Values are for the MT41K256M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 2Gb (256 Meg x
8) component data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
459 450 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
576 558 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
252 252 mA
Precharge quiet standby current I
DD2Q
2
360 360 mA
Precharge standby current I
DD2N
2
378 378 mA
Precharge standby ODT current I
DD2NT
1
387 369 mA
Active power-down current I
DD3P
2
378 378 mA
Active standby current I
DD3N
2
576 540 mA
Burst read operating current I
DD4R
1
954 846 mA
Burst write operating current I
DD4W
1
981 873 mA
Refresh current I
DD5B
1
1728 1719 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
216 216 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
270 270 mA
All banks interleaved read current I
DD7
1
1512 1458 mA
Reset current I
DD8
2
252 252 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
4GB, 8GB (x72, ECC, DR) 240-Pin DDR3L UDIMM
I
DD
Specifications
PDF: 09005aef83cd9e75
ksf18c512_1gx72az.pdf - Rev. J 10/15 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 12: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision E)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 4Gb (512 Meg x
8) component data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
657 585 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
756 720 mA
Precharge power-down current: Slow exit I
DD2P0
2
324 324 mA
Precharge power-down current: Fast exit I
DD2P1
2
576 504 mA
Precharge quiet standby current I
DD2Q
2
576 504 mA
Precharge standby current I
DD2N
2
576 522 mA
Precharge standby ODT current I
DD2NT
1
513 477 mA
Active power-down current I
DD3P
2
684 630 mA
Active standby current I
DD3N
2
684 630 mA
Burst read operating current I
DD4R
1
1575 1422 mA
Burst write operating current I
DD4W
1
1287 1152 mA
Refresh current I
DD5B
1
2277 2214 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
360 360 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
450 450 mA
All banks interleaved read current I
DD7
1
2142 1872 mA
Reset current I
DD8
2
360 360 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
4GB, 8GB (x72, ECC, DR) 240-Pin DDR3L UDIMM
I
DD
Specifications
PDF: 09005aef83cd9e75
ksf18c512_1gx72az.pdf - Rev. J 10/15 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MT18KSF1G72AZ-1G4D1

Mfr. #:
Buy MT18KSF1G72AZ-1G4D1
Manufacturer:
Micron
Description:
MODULE DDR3L SDRAM 8GB 240UDIMM
Lifecycle:
New from this manufacturer.
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