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ESDA22P150-1U3M

P1-P3P4-P6P7-P9P10-P12
1
2
3
Pin #1 ID
Top
view
Bottom view
1
2
3
Pin 1, 2*
GND (ground pin)
Pin 3
Vbus (Vbus pin)
*Pin 1 and Pin 2 must be connected together.
Features
• Low clamping voltage
•
Peak pulse power:
– 4500 W (8/20µs)
• Stand off voltage 20 V
• Unidirectional diode
• Low leakage current:
– 0.25 µA at 25°C
• Complies with the following standards: IEC 61000-4-2 level 4
– ± 30 kV (air discharge)
– ± 30 kV (contact discharge)
Application
Where transient over voltage protection in ESD sensitive equipment is required, such
as:
• Smartphones, mobile phones, tablets, portable multimedia
• USB V
bus
protection
• Power supply protection
• Battery protection
Description
The ESDA22P150-1U3M is a unidirectional single line TVS diode designed to protect
the power line against EOS & ESD transients.
The device is ideal for applications where high power TVS and board space saving is
required.
Product status link
ESDA22P150-1U3M
High power transient voltage suppressor
ESDA22P150-1U3M
Datasheet
DS12572 - Rev 1 - May 2018
For further information contact your local STMicroelectronics sales office.
www
.st.com
1 Characteristics
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
pp
Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
>30
>30
kV
P
pp
Peak pulse power (8/20 μs) 4500 W
I
pp
Peak pulse current (8/20 μs) 150 A
P
pp
Peak pulse power (10/1000 μs) 330 W
I
pp
Peak pulse current (10/1000 μs) 11 A
T
op
Operating junction temperature range -55 to 150 °C
T
stg
Storage junction temperature range -55 to 150 °C
Figure 1. Electrical characteristics (definitions)
Symbol
Parameter
V
=
Breakdown voltage
I
=
Leakage current @V
V
=
Stand-off voltage
I
=
Peak pulse current
R
BR
RM
RM
RM
PP
V
=
Clamping voltage
CL
D
=
Dynamic resistance
I
R
=
Breakdown current
V V V
I
RM
I
R
I
PP
V
I
V
Slope = 1/ R
d
VV
CL
V
BR
RM
V
V
F
I
F
V
=
Forward voltage
I
=
Forward current
F
F
Table 2. Electrical characteristics (values) (T
amb
= 25° C)
Symbol Parameter Min. Typ. Max. Unit
V
RM
20 V
V
BR
I
R
= 1 mA
21 22 23.5 V
I
RM
V
RM
= 20 V
250 nA
V
CL
I
PP
= 100 A 8/20µs
28 31
V
I
PP
= 150 A 8/20µs
31 34
R
D
8/20µs 0.06 Ω
V
CL
I
PP
= 9.2 A 10/1000 µs
27.5
30 V
R
D
10/1000 µs 0.5 Ω
V
F
I
F
= 10 mA
0.7 V
ESDA22P150-1U3M
Characteristics
DS12572 - Rev 1
page 2/12
1.1 Characteristics (curves)
Figure 2. Peak pulse power dissipation versus initial
temperature (typical value)
0
1000
2000
3000
4000
5000
6000
25 50 75 100 125 150 175
P
PP
(W)
T
j
( °C)
8/20µs
Figure 3. Peak pulse power versus exponential pulse
duration (typical value)
100
1000
10000
10 100 1000
P
PP
(W)
t
p
(µs)
Tj initial = 25 °C
Figure 4. Peak pulse current versus clamping voltage
(max value, 8/20 µs)
23 25 27 29 31
0.1
1
10
100
I
pp
(A)
V
CL
(V)
8/20µs
Tj initial = 25 °C
Figure 5. Peak pulse current versus clamping voltage
(max value, 10/1000 µs)
I
pp
(A)
V
CL
(V)
10/1000 µs
T
j
initial = 25 °C
23 25 27 29
31
0.1
1
10
Figure 6. Leakage current versus junction temperature (typical value)
0
20
40
60
80
100
120
140
160
180
200
20 40 60 80 100 120 140 160
I
r
(nA)
T
j
(°C)
I
rm
at V
rm
= 20 V
ESDA22P150-1U3M
Characteristics (curves)
DS12572 - Rev 1
page 3/12
P1-P3P4-P6P7-P9P10-P12

ESDA22P150-1U3M

Mfr. #:
Buy ESDA22P150-1U3M
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors High Power Transient Voltage Suppressor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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