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SBCP56-16T1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 12
1 Publication Order Number:
BCP56T1/D
BCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
Features
• High Current: 1.0 A
• The SOT−223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
• Available in 12 mm Tape and Reel
Use BCP56T1G to Order the 7 inch/1000 Unit Reel
Use BCP56T3G to Order the 13 inch/4000 Unit Reel
• PNP Complement is BCP53T1G
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CEO
80 Vdc
Collector−Base Voltage V
CBO
100 Vdc
Emitter−Base Voltage V
EBO
5 Vdc
Collector Current I
C
1 Adc
Total Power Dissipation
@ T
A
= 25°C (Note 1)
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage
Temperature Range
T
J
, T
stg
−65 to 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
R
q
JA
83.3 °C/W
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
T
L
260
10
°C
Sec
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
COLLECTOR 2,4
BASE
1
EMITTER 3
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
1
2
3
4
www.onsemi.com
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
AYW
XXXXXG
G
XXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
BCP56 Series
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristics
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0)
V
(BR)CBO
100 − − Vdc
Collector−Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
80 − − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
5.0 − − Vdc
Collector−Base Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
− − 100 nAdc
Emitter−Base Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
I
EBO
− − 10
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 5.0 mA, V
CE
= 2.0 V) All Part Types
(I
C
= 150 mA, V
CE
= 2.0 V) BCP56
BCP56−10
BCP56−16
(I
C
= 500 mA, V
CE
= 2.0 V) All Types
h
FE
25
40
63
100
25
−
−
−
−
−
−
250
160
250
−
−
Collector−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
− − 0.5 Vdc
Base−Emitter On Voltage
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
V
BE(on)
− − 1.0 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 35 MHz)
f
T
− 130 − MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
ORDERING INFORMATION
Device Marking Package Shipping
†
BCP56T1G
BH SOT−223
(Pb−Free)
1000 / Tape & Reel
SBCP56T1G*
BCP56T3G
BH SOT−223
(Pb−Free)
4000 / Tape & Reel
SBCP56T3G*
BCP56−10T1G
BH−10 SOT−223
(Pb−Free)
1000 / Tape & Reel
SBCP56−10T1G*
BCP56−10T3G
BH−10 SOT−223
(Pb−Free)
4000 / Tape & Reel
NSVBCP56−10T3G*
BCP56−16T1G
BH−16 SOT−223
(Pb−Free)
1000 / Tape & Reel
SBCP56−16T1G*
BCP56−16T3G
BH−16 SOT−223
(Pb−Free)
4000 / Tape & Reel
SBCP56−16T3G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
BCP56 Series
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
h
FE
, DC CURRENT GAIN
100
10
1000100100.1
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 2. Current−Gain − Bandwidth Product
f, CURRENT‐GAIN — BANDWIDTH PRODUCT (MHz)
T
1000
100
10
100101.0 1000
C, CAPACITANCE (pF)
80
60
40
20
10
8.0
6.0
4.0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
T
A
= 150°C
25°C
-55°C
T
J
= 25°C
C
ibo
C
obo
1000
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
1
0.10.010.001
0.2
0.3
0.4
0.6
0.8
0.9
1.1
1.2
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
150°C
25°C
−55°C
0.5
0.7
1.0
I
C
/I
B
= 10
150°C
25°C
−55°C
1
V
CE
= 2 V
125°C
- 65°C
P1-P3P4-P5

SBCP56-16T1G

Mfr. #:
Buy SBCP56-16T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SBN SSP SOT223 NPN
Lifecycle:
New from this manufacturer.
Delivery:
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