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VS-VSKT500-16PBF

P1-P3P4-P6P7-P9
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF
www.vishay.com
Vishay Semiconductors
Revision: 05-Dec-16
4
Document Number: 94420
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
VSK.500.. Series
R (DC) = 0.065 K/ W
thJC
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 900
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduc tion Period
VSK.500.. Series
R (DC) = 0.065 K/ W
thJC
0
100
200
300
400
500
600
700
0 100 200 300 400 500
RM S Li m i t
Conduc tion Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.500.. Series
Pe r Ju n c t io n
T = 1 3 0 ° C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700 800
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.500.. Series
Pe r Ju n c t io n
T = 1 3 0 ° C
J
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
110100
Numbe r Of Equa l Amp litude Half C yc le Current Pulses (N)
Peak Half Sine Wave On-sta te Current (A)
Init ia l T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Ra t ed V Ap p lied Fo llowing Surg e.
RRM
VSK.500.. Se ries
Pe r Ju n c t i o n
6000
8000
10000
12000
14000
16000
18000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Tra in Dura tion (s)
Maximum Non Rep etitive Surge Current
Versus Pulse Train Dura tion. Control
Of Conduction May Not Be Maintained.
Init ia l T = 130°C
No Volta ge Rea p plied
Ra t e d V Re a p p l i e d
RRM
J
VSK.500.. Se ries
Pe r Ju n c t i o n
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF
www.vishay.com
Vishay Semiconductors
Revision: 05-Dec-16
5
Document Number: 94420
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - On-State Power Loss Characteristics
Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
7
K
/
W
-
D
e
l
t
a
R
0
.
0
9
K
/
W
0
.
1
2
K
/
W
0
.1
6
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
6
K
/
W
t
h
S
A
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30°
To t a l RM S O u t p u t C u r r e n t ( A )
Maximum Total On-state Power Loss (W)
Cond uction Angle
VSK.500.. Series
Pe r M o d ul e
T = 130°C
J
020406080100120
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
1
K
/
W
-
D
e
l
t
a
R
0
.
0
2
K
/
W
0
.
0
3
K
/
W
0
.
0
5
K
/
W
0
.
0
8
K
/
W
0
.
1
2
K
/
W
0
.
2
K
/
W
t
h
S
A
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000
Total Output Current (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x VSK.500.. Se rie s
Si n g l e Ph a se Br i d g e
Connected
T = 130°C
J
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
1
K
/
W
-
D
e
l
t
a
R
0
.
0
2
K
/
W
0
.
0
3
K
/
W
0
.
0
5
K
/
W
0
.
0
8K
/
W
0
.
2
K
/
W
t
h
S
A
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 250 500 750 1000 1250 1500
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x VSK.500.. Series
Th r e e Ph a se Br i d g e
Connected
T = 1 3 0 ° C
J
VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF
www.vishay.com
Vishay Semiconductors
Revision: 05-Dec-16
6
Document Number: 94420
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance Z
thJC
Characteristics
Fig. 12 - Gate Characteristics
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 1 3 0 ° C
J
VSK.500.. Se rie s
Pe r Ju n c t io n
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJC
Tra n si e n t T
hermal Impedance Z (K/W)
VSK.500.. Series
Pe r Ju n c t i o n
St e a d y St a t e V a l u e :
R = 0.065 K/ W
(DC Operation)
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj =2 5 ° C
Tj = - 4 0 ° C
(2) (3)
In st a n t a n e o u s G a t e C u r re nt ( A )
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4m s
(2) PGM = 20W, tp = 2m s
(3) PGM = 40W, tp = 1m s
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
Tj = 1 3 0 ° C
VSK.500.. Series Frequency Limited by PG(AV)
(4)
- Circuit configuration (see end of datasheet)
- Current rating
- Voltage code x 100 = V
RRM
(see voltage ratings table)
- Lead (Pb)-free
Device code
KTVS-VS 500 - 16 PbF
2
3
4
5
21 43 5
1 - Vishay Semiconductors product
P1-P3P4-P6P7-P9

VS-VSKT500-16PBF

Mfr. #:
Buy VS-VSKT500-16PBF
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 1600volt 500amp
Lifecycle:
New from this manufacturer.
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