2004 Jan 16 4
NXP Semiconductors Product data sheet
PNP switching transistors PMBT2907; PMBT2907A
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= −50 V
PMBT2907 − −20 nA
PMBT2907A − −10 nA
collector-base cut-off current I
E
= 0; V
CB
= −50 V; T
j
= 125 °C
PMBT2907 − −20 µA
PMBT2907A − −10 µA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= −5 V − −50 nA
h
FE
DC current gain I
C
= −0.1 mA; V
CE
= −10 V
PMBT2907 35 −
PMBT2907A 75 −
DC current gain I
C
= −1 mA; V
CE
= −10 V
PMBT2907 50 −
PMBT2907A 100 −
DC current gain I
C
= −10 mA; V
CE
= −10 V
PMBT2907 75 −
PMBT2907A 100 −
DC current gain I
C
= −150 mA; V
CE
= −10 V 100 300
DC current gain I
C
= −500 mA; V
CE
= −10 V
PMBT2907 30 −
PMBT2907A 50 −
V
CEsat
collector-emitter saturation
voltage
I
C
= −150 mA; I
B
= −15 mA − −400 mV
I
C
= −500 mA; I
B
= −50 mA − −1.6 V
V
BEsat
base-emitter saturation voltage I
C
= −150 mA; I
B
= −15 mA − −1.3 V
I
C
= −500 mA; I
B
= −50 mA − −2.6 V
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= −10 V; f = 1 MHz − 8 pF
C
e
emitter capacitance I
C
= I
c
= 0; V
EB
= −2 V; f = 1 MHz − 30 pF
f
T
transition frequency I
C
= −50 mA; V
CE
= −20 V; f = 100 MHz 200 − MHz
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
turn-on time I
Con
= −150 mA; I
Bon
= −15 mA;
I
Boff
= 15 mA
− 40 ns
t
d
delay time − 12 ns
t
r
rise time − 30 ns
t
off
turn-off time − 365 ns
t
s
storage time − 300 ns
t
f
fall time − 65 ns
