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BT137-800G0Q

P1-P3P4-P6P7-P9P10-P12P13-P14
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
-
2
2
0
A
B
BT137-800G0
4Q Triac
12 June 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended
for use in general purpose bidirectional switching and phase control applications.
2. Features and benefits
•
High blocking voltage capability
•
Least sensitive gate for highest noise immunity
•
High minimum I
GT
for guaranteed immunity to gate noise
•
Planar passivated for voltage ruggedness and reliability
•
Triggering in all four quadrants
3. Applications
•
General purpose motor controls
•
Lighting controls
•
Applications where only positive gate drive is avaliable
•
Applications where gate noise or interference may occur
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
I
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 65 A
T
j
junction temperature - - 125 °C
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 102 °C; Fig. 1;
Fig. 2; Fig. 3
- - 8 A
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
10 - 50 mAI
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
10 - 50 mA
NXP Semiconductors
BT137-800G0
4Q Triac
BT137-800G0 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 12 June 2014 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
10 - 50 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
10 - 100 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
200 - - V/µs
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2 mounting base; main
terminal 2
1 2
mb
3
TO-220AB (SOT78)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT137-800G0 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4. Marking codes
Type number Marking code
BT137-800G0 BT137-800G0
P1-P3P4-P6P7-P9P10-P12P13-P14

BT137-800G0Q

Mfr. #:
Buy BT137-800G0Q
Manufacturer:
WeEn Semiconductors
Description:
Triacs BT137-800G0/SIL3P/STANDARD MAR
Lifecycle:
New from this manufacturer.
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