NXP Semiconductors
BT137-800G0
4Q Triac
BT137-800G0 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 12 June 2014 3 / 13
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 102 °C; Fig. 1;
Fig. 2; Fig. 3
- 8 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- 65 AI
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- 71 A
I
2
t I
2
t for fusing
t
p
= 10 ms; sine-wave pulse - 21
A
2
s
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
- 50 A/µs
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
- 50 A/µs
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
- 50 A/µs
dI
T
/dt rate of rise of on-state current
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
- 10 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
