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BT137-800G0Q
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
NXP Semiconductors
BT137-800G0
4Q T
riac
BT137-800G0
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
12 June 2014
6 / 13
9.
Thermal characteristics
T
able 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
full cycle;
Fig. 6
-
-
2
K/W
R
th(j-mb)
thermal resistance
from junction to
mounting base
half cycle;
Fig. 6
-
-
2.4
K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
-
60
-
K/W
003aae698
t
p
(s)
10
-5
1
10
10
-1
10
-2
10
-4
10
-3
1
10
-1
10
Z
th(j-mb)
(K/W)
10
-2
bidirectional
unidirectional
Fig. 6.
T
ransient thermal impedance from junction to mounting base as a function of pulse width
NXP Semiconductors
BT137-800G0
4Q T
riac
BT137-800G0
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
12 June 2014
7 / 13
10.
Characteristics
T
able 7.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
10
-
50
mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
10
-
50
mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
10
-
50
mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
10
-
100
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 8
-
-
45
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 8
-
-
60
mA
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 8
-
-
45
mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 8
-
-
60
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
-
-
40
mA
V
T
on-state voltage
I
T
= 10 A; T
j
= 25 °C;
Fig. 10
-
1.3
1.65
V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 1
1
-
0.7
1
V
V
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 1
1
0.25
0.4
-
V
I
D
off-state current
V
D
= 800 V; T
j
= 125 °C
-
0.1
0.5
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
200
-
-
V/µs
dV
com
/dt
rate of change of
commutating voltage
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 3.6 A/
ms; I
T
= 8 A; gate open circuit
10
-
-
V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 12 A; V
D
= 800 V; I
G
= 0.1 A; dI
G
/
dt = 5 A/µs
-
2
-
µs
NXP Semiconductors
BT137-800G0
4Q T
riac
BT137-800G0
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
12 June 2014
8 / 13
T
j
(°C)
-
60
140
90
-
10
40
003aae809
1
2
3
0
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
I
GT
I
GT
(25 °C)
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 7.
Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-
60
140
90
-
10
40
003aae697
1
2
3
0
I
L
I
L(25°C)
Fig. 8.
Normalized latching current as a function of
junction temperature
T
j
(°C)
-
60
140
90
-
10
40
003aae699
1.0
0.5
1.5
2.0
0
I
H
I
H(25°C)
Fig. 9.
Normalized holding current as a function of
junction temperature
V
T
(V)
0
3
2
1
003aae696
10
20
30
I
T
(A)
0
(1)
(2)
(
3)
V
o
= 1.264 V
R
s
= 0.038 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10.
On-state current as a function of on-state
voltage
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BT137-800G0Q
Mfr. #:
Buy BT137-800G0Q
Manufacturer:
WeEn Semiconductors
Description:
Triacs BT137-800G0/SIL3P/STANDARD MAR
Lifecycle:
New from this manufacturer.
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