IS42S32400D
Integrated Silicon Solution, Inc. — www.issi.com
13
Rev. F
03/03/09
Mode
Register
Set
IDLE
Self
Refresh
CBR (Auto)
Refresh
Row
Active
Active
Power
Down
Power
Down
WRITE
WRITE
SUSPEND
READ
READ
SUSPEND
WRITEA
SUSPEND
WRITEA
READA
READA
SUSPEND
POWER
ON
Precharge
Automatic sequence
Manual Input
SELF
SELF exit
REF
MRS
ACT
CKE
CKE
CKE
CKE
BST
Read
Write
Write
Precharge
RRE (Prec
harge term
inatio
n)
PRE (Precharge termination)
Write with
Auto Precharge
Read with
Auto Precharge
Read
Write
BST
CKE
CKECKE
CKE
CKE
CKE
CKE
CKE
Read
STATE DIAGRAM
14
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
03/03/09
IS42S32400D
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameters Rating Unit
VDD MAX Maximum Supply Voltage –0.5 to +4.6 V
VDDQ
MAX Maximum Supply Voltage for Output Buffer –0.5 to +4.6 V
VIN Input Voltage –0.5 to VDD + 0.5 V
VOUT Output Voltage –1.0 to VDDQ + 0.5 V
PD MAX Allowable Power Dissipation 1 W
ICS Output Shorted Current 50 mA
TOPR Operating Temperature Com. 0 to +70 °C
Ind. –40 to +85
TSTG Storage Temperature –65 to +150 °C
DC RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
VDD Supply Voltage 3.0 3.3 3.6 V
VDDQ I/O Supply Voltage 3.0 3.3 3.6 V
VIH
(1)
Input High Voltage 2.0 VDDQ + 0.3 V
VIL
(2)
Input Low Voltage -0.3 +0.8 V
CAPACITANCE CHARACTERISTICS (At TA = 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V)
Symbol Parameter Min. Max. Unit
-6 -7
CIN1 Input Capacitance: CLK 2.5 3.5 4.0 pF
CIN2 Input Capacitance:All other input pins 2.5 3.8 5.0 pF
CI/O Data Input/Output Capacitance:I/Os 4.0 6.5 6.5 pF
Note:
1. VIH (max) = VDDQ +1.2V (PULSE WIDTH < 3NS).
2. VIL (min) = -1.2V (PULSE WIDTH < 3NS).
3. All voltages are referenced to Vss.
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
2. All voltages are referenced to Vss.
IS42S32400D
Integrated Silicon Solution, Inc. — www.issi.com
15
Rev. F
03/03/09
DC ELECTRICAL CHARACTERISTICS 1 (Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter Test Condition -6 -7 Unit
IDD1
(1)
Operating Current One bank active, CL = 3, BL = 1, 140 120 mA
tCLK = tCLK (min), tRC = tRC (min)
IDD2P Precharge Standby Current CKE V IL ( MAX), tCK = 15ns 2 2 mA
(In Power-Down Mode)
IDD2PS Precharge Standby Current CKE V IL ( MAX), CLK V IL ( MAX)11mA
(In Power-Down Mode)
IDD2N
(2)
Precharge Standby Current CS Vcc - 0.2V, CKE VIH ( MIN)2525mA
(In Non Power-Down Mode) tCK = 15ns
IDD2NS Precharge Standby Current CS Vcc - 0.2V, CKE VIH ( MIN) o r 15 15 mA
(In Non Power-Down Mode) CKE V IL ( MAX), All inputs stable
IDD3N
(2)
Active Standby Current CS Vcc - 0.2V, CKE VIH ( MIN)3030mA
(In Non Power-Down Mode) tCK = 15ns
IDD3NS Active Standby Current CS Vcc - 0.2V, CKE VIH ( MIN) or 20 20 mA
(In Non Power-Down Mode) CKE V IL ( MAX), All inputs stable
IDD4 Operating Current All banks active, BL = 4, CL = 3, 180 130 mA
tCK = tCK (min)
IDD5 Auto-Refresh Current tRC = tRC (min), tCLK = tCLK (min) 180 160 mA
IDD6 Self-Refresh Current CKE 0.2V 2 2 mA
Notes:
1. IDD (MAX) is specified at the output open condition.
2. Input signals are changed one time during 30ns.
DC ELECTRICAL CHARACTERISTICS 2 (Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter Test Condition Min Max Unit
IIL Input Leakage Current 0V Vin Vcc, with pins other than -10 10
μA
the tested pin at 0V
IOL Output Leakage Current Output is disabled, 0V Vout Vcc, -5 5
μA
VOH Output High Voltage Level IOH = -2mA 2.4
V
VOL Output Low Voltage Level IOL = 2mA
0.4
V

IS42S32400D-7T-TR

Mfr. #:
Manufacturer:
Description:
IC DRAM 128M PARALLEL 86TSOP II
Lifecycle:
New from this manufacturer.
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