VS-VSK.170PbF, VS-VSK.250PbF Series
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Vishay Semiconductors
Revision: 09-Feb-17
4
Document Number: 94417
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Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM RECTANGULAR CONDUCTION AT T
J
MAXIMUM
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033
K/W
VSK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
60
70
80
90
100
110
120
130
0 40 80 120 160 200
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
VSK.170.. series
R
thJC
(DC) = 0.17 K/W
60
70
80
90
100
110
120
130
0 50 100 150 200 250 3
00
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
VSK.170.. series
R
thJC
(DC) = 0.17 K/W
0
50
100
150
200
250
300
040801201602
00
RMS limit
Conduction angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
VSK.170.. series
per junction
T
J
= 125° C
0
50
100
150
200
250
300
350
0 50 100 150 200 250 3
00
DC
180°
120°
90°
60°
30°
RMS limit
Conduction period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.170.. series
per junction
T
J
= 125°C