ALD910017SALI

©2014 Advanced Linear Devices, Inc., Vers. 2.0 www.aldinc.com 1 of 6
e
EPAD
TM
®
N
A
B
L
E
D
E
ADVANCED
LINEAR
DEVICES, INC.
GENERAL DESCRIPTION
The ALD810017/ALD910017 are members of the ALD8100xx
(quad) and ALD9100xx (dual) family of Supercapacitor Auto Bal-
ancing MOSFETs, or SAB™ MOSFETs. SAB MOSFETs are built
with production proven EPAD
®
technology and are designed to ad-
dress voltage and leakage-current balancing of supercapacitors
connected in series. Supercapacitors, also known as ultracapacitors
or supercaps, connected in series can be leakage-current balanced
by using a combination of one or more devices connected across
each supercapacitor stack to prevent over-voltages.
The ALD810017 offers a set of unique, precise operating voltage
and current characteristics for each of four SAB MOSFET devices,
as shown in its Operating Electrical Characteristics table. It can be
used to balance up to four supercapacitors connected in series.
The ALD910017 has its own set of unique precision Operating Elec-
trical Characteristics for each of its two SAB MOSFET devices,
suitable for up to two series-connected supercapacitors.
Each SAB MOSFET features a precision gate threshold voltage in
the V
t
mode, which is 1.70V when the gate-drain source terminals
(V
GS
= V
DS
) are connected together at a drain-source current of
I
DS(ON)
= 1µA. In this mode, input voltage V
IN
= V
GS
= V
DS.
Dif-
ferent V
IN
produces an Output Current I
OUT
= I
DS(ON)
character-
istic and results in an effective variable resistor that varies in value
exponentially with V
IN
. This V
IN
, when connected across each
supercapacitor in a series, balances each supercapacitor to within
its voltage and current limits.
When V
IN
= 1.70V is applied to an ALD810017/ALD910017, its
I
OUT
is 1µA. For a 100mV increase in V
IN
, to 1.80V, I
OUT
increases
by about tenfold. For an additional increase in V
IN
to 1.92V for the
ALD910017 (1.94V for the ALD810017), I
OUT
increases one hun-
dredfold, to 100µA. Conversely, for a 100mV decrease in V
IN
to
1.60V, I
OUT
decreases to one tenth of its previous value, to 0.1µA.
Another 100mV decrease in input voltage would reduce I
OUT
to
0.01µA. Hence, when an ALD810017/ALD910017 SAB MOSFET
is connected across a supercapacitor that charges to less than
1.50V, it would dissipate essentially no power.
(Continued on next page)
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB
) MOSFET ARRAY
ALD810017/ALD910017
FEATURES & BENEFITS
• Simple and economical to use
• Precision factory trimmed
Automatically regulates and balances leakage currents
• Effective for supercapacitor charge-balancing
• Balances up to 4 supercaps with a single IC package
• Balances 2-cell, 3-cell, 4-cell series-connected supercaps
• Scalable to larger supercap stacks and arrays
• Near zero additional leakage currents
• Zero leakage at 0.3V below rated voltages
• Balances series and/or parallel-connected supercaps
• Leakage currents are exponential function of cell voltages
Active current ranges from <0.3nA to >1000µA
Always active, always fast response time
• Minimizes leakage currents and power dissipation
*IC pins are internally connected, connect to V-
PIN CONFIGURATIONS
SAL PACKAGE
ALD910017
V-
G
N1
D
N1
S
N1
1
2
3
4
I
C
*
G
N2
D
N2
S
N2,
V-
V+
6
7
8
5
SCL PACKAGE
ALD810017
D
N1
G
N1
IC*
D
N4
S
N4
G
N4
S
N1
V-
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
D
N2
G
N2
IC*
D
N3
S
N3
G
N3
S
N2
V+
V-
V-
M2
M1
M4
M3
V-
V-
APPLICATIONS
• Series-connected supercapacitor cell leakage balancing
• Energy harvesting
• Long term backup battery with supercapacitor outputs
• Zero-power voltage divider at selected voltages
• Matched current mirrors and current sources
• Zero-power mode maximum voltage limiter
• Scaled supercapacitor stacks and arrays
PRODUCT FAMILY SPECIFICATIONS
For more information on supercapacitor balancing, how SAB
MOSFETs achieve automatic supercapacitor balancing, the device
characteristics of the SAB MOSFET family, product family product
selection guide, applications, configurations, and package infor-
mation, please download from www.aldinc.com the document:
“ALD8100xx/ALD9100xx Family of Supercapacitor Auto Balanc-
ing (SAB™) MOSFET ARRAYs”
ORDERING INFORMATION
(“L” suffix denotes lead-free (RoHS))
Operating Temperature Range
Package 0°C to +70°C -40°C to +85°C
(Commercial) (Industrial)
16-Pin SOIC ALD810017SCL ALD810017SCLI
8-Pin SOIC ALD910017SAL ALD910017SALI
ALD810017/ALD910017 Advanced Linear Devices, Inc. 2 of 6
SCHEMATIC DIAGRAM OF A TYPICAL
CONNECTION FOR A TWO-SUPERCAP STACK
1-8 DENOTES PACKAGE PIN NUMBERS
C1-C2 DENOTES SUPERCAPACITORS
M1
M2
2
3, 8
4
1, 5
6
7
ALD9100XX
C1
C2
+
+
V+
+15.0V
V
1
I
DS(ON)
80mA
SCHEMATIC DIAGRAM OF A TYPICAL
CONNECTION FOR A FOUR-SUPERCAP STACK
1-16 DENOTES PACKAGE PIN NUMBERS
C1-C4 DENOTES SUPERCAPACITORS
V+
+15.0V
1, 5, 8, 16
2, 12
3
4
6
7
9
10
11
13
14
15
ALD8100XX
C4
+
+
C3
+
C2
+
C1
M1
M2
M3
M4
V
1
V
2
V
3
I
DS(ON)
80mA
GENERAL DESCRIPTION (CONT.)
The voltage dependent characteristic of the ALD810017/
ALD910017 on-resistance is effective in controlling excessive volt-
age rise across a supercapacitor when connected across it. In se-
ries-connected supercapacitor stacks, when one supercapacitor
voltage rises, the voltage of the other supercapacitors drops, with
the ones that have the highest leakage currents having the lowest
supercapacitor voltages. The SAB MOSFETs connected across
these supercapacitors would exhibit complementary opposing cur-
rent levels, resulting in little additional leakage currents other than
those caused by the supercapacitors themselves.
For technical assistance, please contact ALD technical support at
techsupport@aldinc.com.
APPLYING THE ALD810017/ALD910017:
1) Select a maximum supercapacitor leakage current limit for any
supercapacitor used in the stack. This is the same as output cur-
rent, I
OUT
= I
DS(ON)
, of the ALD810017/ALD910017. Test that each
supercapacitor leakage current meets this maximum current limit
before use in the stack.
2) Determine whether the input voltage V
IN
(V
GS
= V
DS
) at that
I
OUT
is acceptable for the intended application. This voltage is the
same voltage as the maximum desired operating voltage of the
supercapacitor. For example, with the ALD810017, I
OUT
= 1000µA
corresponds to V
IN
= 2.22V.
3) Determine that the operating voltage margin, due to various
tolerances and/or temperature effects, is adequate for the intended
operating environment of the supercapacitor.
ALD810017/ALD910017 Advanced Linear Devices, Inc. 3 of 6
ALD810017
Parameter Symbol Min Typ Max Unit Test Conditions
Gate Threshold Voltage V
t
1.68 1.70 1.72 V V
GS
= V
DS;
I
DS(ON)
= 1µA
Offset Voltage V
OS
520mVV
t1
- V
t2
or V
t3
- V
t4
Offset Voltage Tempco TC
VOS
5 µV/C V
t1
- V
t2
or V
t3
- V
t4
Gate Threshold Voltage Tempco TC
Vt
-2.2 mV/C V
GS
= V
DS;
I
DS(ON)
= 1µA
Output Current I
OUT
0.0001 µAV
IN
= 1.30V
Drain Source On Resistance R
DS(ON) 13000
M
Output Current I
OUT
0.001 µAV
IN
= 1.40V
Drain Source On Resistance R
DS(ON) 1400
M
Output Current I
OUT
0.01 µAV
IN
= 1.50V
Drain Source On Resistance R
DS(ON) 150
M
Output Current I
OUT
0.1 µAV
IN
= 1.60V
Drain Source On Resistance R
DS(ON) 16
M
Output Current I
OUT
1 µAV
IN
= 1.70V
Drain Source On Resistance R
DS(ON) 1.7
M
Output Current I
OUT
10 µAV
IN
= 1.80V
Drain Source On Resistance R
DS(ON) 0.18
M
Output Current I
OUT
100 µAV
IN
= 1.94V
Drain Source On Resistance R
DS(ON) 0.019
M
Output Current I
OUT
300 µAV
IN
= 2.04V
Drain Source On Resistance R
DS(ON) 0.007
M
Output Current I
OUT
1000 µAV
IN
= 2.22V
Drain Source On Resistance R
DS(ON) 0.002
M
Output Current I
OUT
3000 µAV
IN
= 2.52V
Drain Source On Resistance R
DS(ON) 0.001
M
Output Current I
OUT
10000 µAV
IN
= 3.12V
Drain Source On Resistance R
DS(ON) 0.0003
M
Drain Source Breakdown Voltage BV
DSX
10.6 V
Drain Source Leakage Current
1
I
DS(OFF)
10 400 pA V
IN
= V
GS
= V
DS
= V
t
- 1.0
V
IN
= V
GS
= V
DS
= V
t
- 1.0,
4nAT
A
= +125°C
Gate Leakage Current
1
I
GSS
5 200 pA V
GS
= 5.0V, V
DS
= 0V
V
GS
= 5.0V, V
DS
= 0V,
1nAT
A
= +125°C
Input Capacitance C
ISS
15 pF V
GS
= 0V, V
DS
= 5.0V
Turn-on Delay Time t
on 10 ns
Turn-off Delay Time t
off 10 ns
Crosstalk 60 dB f = 100KHz
OPERATING ELECTRICAL CHARACTERISTICS
V
+
= +5V, V
-
= GND, T
A
= 25
°C, V
IN
= V
GS
=V
DS,
I
OUT
= I
DS(ON)
unless otherwise specified
ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage 15.0V
Drain-Source voltage, V
DS
10.6V
Gate-Source voltage, V
GS
10.6V
Operating Current 80mA
Power dissipation 500mW
Operating temperature range SCL 0°C to +70°C
Operating temperature range SCLI -40°C to +85°C
Storage temperature range -65°C to +150°C
Lead temperature, 10 seconds +260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

ALD910017SALI

Mfr. #:
Manufacturer:
Advanced Linear Devices
Description:
MOSFET Dual SAB MOSFET ARRAY VT=1.70V
Lifecycle:
New from this manufacturer.
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