Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to ab-
solute maximum rating conditions for extended periods may adversely affect reliability.
Table 10: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any pin relative to V
SS
–0.4 1.975 V
Table 11: Operating Conditions
Symbol Parameter Min Nom Max Units Notes
V
DD
V
DD
supply voltage 1.283 1.35 1.45 V
1.425 1.5 1.575 V 1
V
REFCA(DC)
Input reference voltage command/address bus 0.49 × V
DD
0.5 × V
DD
0.51 × V
DD
V
V
REFDQ(DC)
I/O reference voltage DQ bus 0.49 × V
DD
0.5 × V
DD
0.51 × V
DD
V
I
VTT
Termination reference current from V
TT
–600 600 mA
V
TT
Termination reference voltage (DC) – command/
address bus
0.49 × V
DD
-
20mV
0.5 × V
DD
0.51 × V
DD
+
20mV
V 2
I
I
Input leakage current; Any input
0V V
IN
V
DD
; V
REF
input 0V V
IN
0.95V (All other pins not under
test = 0V)
Address inputs,
RAS#, CAS#,
WE#, S#, CKE,
ODT, BA, CK,
CK#
–16 0 16 µA
DM –2 0 2
I
OZ
Output leakage current; 0V
V
OUT
V
DD
; DQ and ODT are disa-
bled; ODT is HIGH
DQ, DQS, DQS# –5 0 5 µA
I
VREF
V
REF
supply leakage current; V
REFDQ
= V
DD/2
or
V
REFCA
= V
DD/2
(All other pins not under test = 0V)
–8 0 8 µA
T
A
Module ambient operating temperature 0 70 °C 3, 4
T
C
DDR3 SDRAM component case operating tempera-
ture
0 95 °C 3, 4, 5
Notes:
1. Module is backward-compatible with 1.5V operation. Refer to device specification for
details and operation guidance.
2. V
TT
termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
3. T
A
and T
C
are simultaneous requirements.
4. For further information, refer to technical note TN-00-08: “Thermal Applications,”
available on Micron’s web site.
5. The refresh rate is required to double when 85°C < T
C
95°C.
1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3L SODIMM
Electrical Specifications
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ktf8c128_256_512x64hz.pdf - Rev. K 7/15 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 12: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3L SODIMM
DRAM Operating Conditions
PDF: 09005aef84577368
ktf8c128_256_512x64hz.pdf - Rev. K 7/15 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 13: DDR3 I
DD
Specifications and Conditions – 1GB (Die Revision J)
Values are for the MT41K128M8 DDR3L SDRAM only and are computed from values specified in the 1.35V 1Gb
(128Meg x 8) component data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
272 264 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
360 344 mA
Precharge power-down current: Slow exit I
DD2P0
96 96 mA
Precharge power-down current: Fast exit I
DD2P1
96 96 mA
Precharge quiet standby current I
DD2Q
120 120 mA
Precharge standby current I
DD2N
136 136 mA
Precharge standby ODT current I
DD2NT
200 192 mA
Active power-down current I
DD3P
112 112 mA
Active standby current I
DD3N
192 184 mA
Burst read operating current I
DD4R
664 576 mA
Burst write operating current I
DD4W
704 616 mA
Refresh current I
DD5
1280 1240 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
96 96 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
112 112 mA
All banks interleaved read current I
DD7
1192 1152 mA
Reset current I
DD8
112 112 mA
1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3L SODIMM
I
DD
Specifications
PDF: 09005aef84577368
ktf8c128_256_512x64hz.pdf - Rev. K 7/15 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.

MT8KTF12864HZ-1G4G1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3L SDRAM 1GB 204SODIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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