1. Product profile
1.1 General description
Passivated sensitive gate triac in a SOT54A (wide pitch) plastic package
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
OT407
Four-quadrant triac, enhanced noise immunity
Rev. 01 — 19 May 2008 Product data sheet
n Sensitive gate n Gate triggering in four quadrants
n Direct interfacing to logic level ICs n Direct interfacing to low power gate drive
circuits
n Enhanced immunity to voltage
transients and noise
n High blocking voltage to 800 V
n Home appliances n Low power motor control
n Low power AC fan speed controllers n Low power loads in industrial process
control
n V
DRM
800 V n I
GT
5mA
n I
TSM
12.5 A (t = 20 ms) n I
GT
7 mA (T2 G+)
n I
T(RMS)
1A
Table 1. Pinning
Pin Description Simplified outline Graphic symbol
1 main terminal 2 (T2)
SOT54A
2 gate (G)
3 main terminal 1 (T1)
321
sym051
T1
G
T2
OT407_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 May 2008 2 of 12
NXP Semiconductors
OT407
Four-quadrant triac, enhanced noise immunity
3. Ordering information
4. Limiting values
Table 2. Ordering information
Type number Package
Name Description Version
OT407 - plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54A
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
V
RRM
repetitive peak reverse voltage - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
lead
38 °C; see
Figure 4 and 5
-1A
I
TSM
non-repetitive peak on-state current full sine wave; T
j
=25°C prior to
surge; see
Figure 2 and 3
t = 20 ms - 12.5 A
t = 16.7 ms - 13.8 A
I
2
tI
2
t for fusing t
p
= 10 ms - 1.28 A
2
s
dI
T
/dt rate of rise of on-state current I
TM
= 1 A; I
G
= 20 mA;
dI
G
/dt = 0.2 A/µs
T2+ G+ - 50 A/µs
T2+ G -50A/µs
T2 G -50A/µs
T2 G+ - 10 A/µs
I
GM
peak gate current - 1 A
P
GM
peak gate power - 2 W
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature 40 +150 °C
T
j
junction temperature - 125 °C
OT407_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 May 2008 3 of 12
NXP Semiconductors
OT407
Four-quadrant triac, enhanced noise immunity
α = conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aac259
0.0
0.4
0.8
1.2
1.6
2.0
0 0.2 0.4 0.6 0.8 1 1.2
I
T(RMS)
(A)
P
tot
(W)
α = 180°
120°
90°
60°
30°
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
003aac260
0
4
8
12
16
1 10 10
2
10
3
number of cycles
I
TSM
(A)
I
TSM
t
I
T
T
j(init)
= 25 °C max
1/f

OT407,126

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs 800V 13.8A Thyristor TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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