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OT407,126

P1-P3P4-P6P7-P9P10-P12
OT407_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 May 2008 4 of 12
NXP Semiconductors
OT407
Four-quadrant triac, enhanced noise immunity
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2− G+ quadrant limit
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values
f = 50 Hz
T
lead
= 38 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of solder
point temperature; maximum values
003aac262
1
10
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
I
TSM
(A)
(1)
(2)
I
TSM
t
I
T
T
j(init)
= 25 °C max
t
p
003aac263
0
4
8
12
16
10
-2
10
-1
1 10
surge duration (s)
I
T(RMS)
(A)
003aac264
0
0.4
0.8
1.2
-50 0 50 100 150
T
lead
(°C)
I
T(RMS)
(A)
OT407_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 May 2008 5 of 12
NXP Semiconductors
OT407
Four-quadrant triac, enhanced noise immunity
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-lead)
thermal resistance from junction to
lead
full cycle; see Figure 6 --60K/W
R
th(j-a)
thermal resistance from junction to
ambient
full cycle; printed-circuit
board mounted; lead
length = 4 mm
- 150 - K/W
Fig 6. Transient thermal impedance from junction to lead as a function of pulse width
10
−1
10
−2
1
10
Z
th(j-lead)
(K/W)
t
p
(s)
10
−5
110
10
−1
10
−2
10
−4
10
−3
10
2
003aac206
t
p
P
t
OT407_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 May 2008 6 of 12
NXP Semiconductors
OT407
Four-quadrant triac, enhanced noise immunity
6. Static characteristics
Table 5. Static characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; see Figure 8
T2+ G+ 0.25 - 5 mA
T2+ G− 0.25 - 5 mA
T2− G− 0.25 - 5 mA
T2− G+ 0.35 - 7 mA
I
L
latching current V
D
= 12 V; I
G
= 0.1 A; see Figure 10
T2+ G+ - - 10 mA
T2+ G− - - 25 mA
T2− G− - - 10 mA
T2− G+ - - 10 mA
I
H
holding current V
D
= 12 V; I
G
= 0.1 A; see Figure 11 - - 10 mA
V
T
on-state voltage I
T
= 1 A; see Figure 9 - 1.3 1.6 V
V
GT
gate trigger voltage V
D
= 12 V; I
T
= 0.1 A; see Figure 7 - - 1.3 V
V
D
=V
DRM
; I
T
= 0.1 A; T
j
= 125 °C 0.2 - - V
I
D
off-state current V
D
=V
DRM(max)
; T
j
= 125 °C - - 0.5 mA
P1-P3P4-P6P7-P9P10-P12

OT407,126

Mfr. #:
Buy OT407,126
Manufacturer:
WeEn Semiconductors
Description:
Triacs 800V 13.8A Thyristor TRIAC
Lifecycle:
New from this manufacturer.
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