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2N2326A

P1-P2
TECHNICAL DATA
SILICON CONTROLLED RECTIFIER
Qualified per MIL-PRF-19500/276
Devices Qualified
Level
2N2323
2N2323S
2N2323A
2N2323AS
2N2324
2N2324S
2N2324A
2N2324AS
2N2326
2N2326S
2N2326A
2N2326AS
2N2328
2N2328S
2N2328A
2N2328AS
2N2329
2N2329S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Sym
2N2323,S/
2N2323A,S
2N2324,S/
2N2324A,S
2N2326,S/
2N2326A,S
2N2328,S/
2N2328A,S
2N2329,S
Unit
Reverse Voltage V
RM
50 100 200 300 400 Vdc
Working Peak Reverse Voltage
V
RM
75 150 300 400 500 Vpk
Forward Blocking Voltage V
FBXM
50
(3/4)
100
(3/4)
200
(3/4)
300
(3/4)
400
(3)
Vpk
Average Forward Current
(1)
I
O
0.22 Adc
Forward Current Surge Peak
(2)
I
FSM
15 Adc
Cathode-Gate Current V
KGM
6 Vpk
Operating Temperature T
op
-65 to +125
0
C
Storage Junction Temp T
stg
-65 to +150
0
C
1) This average forward current is for an ambient temperature of 80
0
C and 180 electrical degrees of
conduction.
2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during
the first 5 µs after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured
from the point where the thyristor voltage has decayed to 90% of its initial blocking value.
3) Gate connected to cathode through 1,000 ohm resistor.
4) Gate connected to cathode through 2,000 ohm resistor.
TO-5
*See appendix A
for package outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
SUBGROUP 2 TESTING
Reverse Blocking Current
R
2
= 1 kµ 2N2323 thru 2N2329
2N2323S thru 2N2329S
R
2
= 2 kµ 2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
V
R
= 50 Vdc 2N2323, S, A, AS
V
R
= 100 Vdc 2N2324, S, A, AS
V
R
= 200 Vdc 2N2326, S, A, AS
V
R
= 300 Vdc 2N2328, S, A, AS
V
R
= 400 Vdc 2N2329, S,
I
RBX1
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N2323, A, AS, S; 2N2324, A, AS, S; 2N2326, A, AS, S; 2N2328, A, AS, S; 2N232, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Forward Blocking Current
R
2
= 1 kΩ 2N2323 thru 2N2329
2N2323S thru 2N2329S
R
2
= 2 kΩ 2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
V
R
= 50 Vdc 2N2323, S, A, AS
V
R
= 100 Vdc 2N2324, S, A, AS
V
R
= 200 Vdc 2N2326, S, A, AS
V
R
= 300 Vdc 2N2328, S, A, AS
V
R
= 400 Vdc 2N2329, S
I
FBX1
10
µAdc
Reverse Gate Current
V
KG
= 6 Vdc
I
KG
200
µAdc
Gate Trigger Voltage and Current
V
2
= V
FBX
= 6 Vdc; R
L
= 100 Ω
R
e
= 1 kΩ 2N2323 thru 2N2329 and
2N2323S thru 2N2329S
R
e
= 2 kΩ 2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
V
GT1
I
GT1
V
GT1
I
GT1
0.35
0.35
0.80
200
0.60
20
Vdc
µAdc
Vdc
µAdc
SUBGROUP 4 TESTING
Exponential Rate of Voltage Rise T
A
= 125
0
C
50 Ω ≤ R
L
≤ 400 Ω, C = 0.1 to 1.0 µF, repetition rate = 60 pps,
test duration = 15 seconds
dv/dt = 1.8 v/µs, R
3
= 1 kΩ 2N2323 thru 2N2329 and
2N2323S thru 2N2329S
dv/dt = 0.7 v/µs, R
3
= 2 kΩ 2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
V
AA
= 50 Vdc 2N2323, S, A, AS
V
AA
= 100 Vdc 2N2324, S, A, AS
V
AA
= 200 Vdc 2N2326, S, A, AS
V
AA
= 300 Vdc 2N2328, S, A, AS
V
AA
= 400 Vdc 2N2329, S
V
FBX
47
95
190
285
380
Vdc
Forward “on” Voltage
i
FM
= 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max
V
FM
2.2
V(pk)
Holding Current
V
AA
= 24 Vdc max, I
F1
= 100 mAdc, I
F2
= 10 mAdc
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25 µs min., R
2
= 330 Ω
R
3
= 1 kΩ 2N2323 thru 2N2329 and
2N2323S thru 2N2329S
R
3
= 2 kΩ 2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
I
HOX
2.0 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
P1-P2

2N2326A

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Manufacturer:
Central Semiconductor
Description:
SCRs Leaded Thyristor SCR
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