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VLIN1616-02G-E3-18

P1-P3P4-P6
VLIN1616-02G
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 19-Jul-17
1
Document Number: 85924
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low Capacitance, Single-Line ESD Protection Diode in SOD-323
MARKING (example only)
XYZ = type code (see table below)
bar = pin 1
DESIGN SUPPORT TOOLS click logo to get started
FEATURES
• For LIN-bus applications
• Small SOD-323 package
• 1-line ESD protection
• Working range: ± 16 V
• Low leakage current I
R
< 0.05 μA
• Low load capacitance C
D
< 24 pF
• ESD protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
• e3 - pins plated with tin (Sn)
• AEC-Q101 qualified available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SOD-323
22756
20503
1
2
XYZ
1
Available
Models
ORDERING INFORMATION
PART
NUMBER
(EXAMPLE)
ENVIRONMENTAL AND QUALITY CODE PACKAGING CODE
ORDERING CODE
(EXAMPLE)
AEC-Q101
QUALIFIED
RoHS-COMPLIANT + LEAD
(Pb)-FREE TERMINATIONS
TIN
PLATED
3K PER 7" REEL
(8 mm TAPE)
15K/BOX = MOQ
10K PER 13" REEL
(8 mm TAPE)
10K/BOX = MOQ
STANDARD GREEN
VLIN1616-02G - E - 3 -08 - VLIN1616-02G-E3-08
VLIN1616-02G H E - 3 -08 - VLIN1616-02GHE3-08
VLIN1616-02G - E - 3 - -18 VLIN1616-02G-E3-18
VLIN1616-02G H E - 3 - -18 VLIN1616-02GHE3-18
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VLIN1616-02G SOD-323 161 4.30 mg UL 94 V-0
MSL level 1
(according J-STD-020)
Peak temperature
max. 260 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current T
A
= 25 °C; acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot I
PPM
6A
Peak pulse power T
A
= 25 °C; acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot P
PP
200 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses; T
A
= 25 °C
V
ESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses; T
A
= 25 °C ± 30 kV
Operating temperature Junction temperature T
J
-55 to +150 °C
Storage temperature T
STG
-55 to +150 °C
VLIN1616-02G
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 19-Jul-17
2
Document Number: 85924
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω / 150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 3 - 10/1000 μs Peak Pulse Current Wave Form
Fig. 4 - Typical Capacitance C
D
vs. Reverse Voltage V
R
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--16V
Reverse voltage At I
R
= 0.05 μA V
R
16 - - V
Reverse current At V
RWM
= 16 V I
R
- - 0.05 μA
Reverse breakdown voltage At I
R
= 1 mA V
BR
17.1 18.6 20 V
Reverse clamping voltage
At I
PP
1 A; t
p
= 8/20 μs V
C
-2225V
At I
PP
= I
PPM
= 6 A; t
p
= 8/20 μs V
C
-2933V
Capacitance At V
R
= 0 V, f = 1 MHz C
D
-1824pF
10
100
1000
10000
0
20
40
60
80
100
120
-10 0 10 20 30 40 50 60 70 80 90 100
Axis Title
1st line
2nd line
2nd line
I
ESD
(%)
t (ns)
2nd line
Rise time = 0.7 ns to 1 ns
53
27
20557
10
100
1000
10000
0
20
40
60
80
100
010203040
Axis Title
1st line
2nd line
2nd line
I
PPM
(%)
t (µs)
2nd line
20 µs to 50 %
8 µs to 100 %
20548
10
100
1000
10000
0
10
20
30
40
50
60
70
80
90
100
110
0 1000 2000 3000
Axis Title
1st line
2nd line
2nd line
I
RSM
(%)
t (µs)
2nd line
1000 µs to 50 %
Rise time 10 µs to 100 %
22881
0
2
4
6
8
10
12
14
16
18
20
-20 -10 0 10 20
2nd line
C
D
(pF)
V
R
(V)
2nd line
f = 1 MHz
22882
VLIN1616-02G
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 19-Jul-17
3
Document Number: 85924
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
Fig. 6 - Typical Peak Clamping Voltage V
C
vs.
Peak Pulse Current I
PP
Fig. 7 - Typical Peak Clamping Voltage vs.
Peak Pulse Current (10/1000 μs)
Fig. 8 - Typical Clamping Voltage V
C-TLP
vs. Pulse Current I
TLP
0
5
10
15
20
25
0.001 0.1 10 1000
2nd line
V
R
(V)
I
R
(µA)
2nd line
22883
10
100
1000
10000
0
5
10
15
20
25
30
35
012345678
Axis Title
1st line
2nd line
2nd line
V
C
(V)
I
PP
(A)
2nd line
Measured according IEC 61000-4-5
(8/20 µs - wave form)
22884
10
100
1000
10000
0
5
10
15
20
25
30
35
00.511.5
Axis Title
1st line
2nd line
2nd line
V
C
(V)
I
PP
(A)
2nd line
Measured with “10/1000 µs” - wave form
22885
10
100
1000
10000
0
5
10
15
20
25
30
35
40
0 1020304050
Axis Title
1st line
2nd line
2nd line
V
C-
TLP
(V)
I
TLP
(A)
2nd line
Transmission line pulse (TLP): t
p
= 100 ns
22886
P1-P3P4-P6

VLIN1616-02G-E3-18

Mfr. #:
Buy VLIN1616-02G-E3-18
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors ESD Prot SOD-323
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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