©2012 Silicon Storage Technology, Inc. DS25023B 06/13
10
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Operations
Table 3: Operation Modes Selection
Mode CE# OE# WE# DQ Address
Read V
IL
V
IL
V
IH
D
OUT
A
IN
Program V
IL
V
IH
V
IL
D
IN
A
IN
Erase V
IL
V
IH
V
IL
X
1
1. X can be V
IL
or V
IH
, but no other value.
Sector address,
XXH for Chip-Erase
Standby V
IH
X X High Z X
Write Inhibit X V
IL
X High Z/ D
OUT
X
XXV
IH
High Z/ D
OUT
X
Product Identification
Software Mode V
IL
V
IL
V
IH
See Table 4
T3.4 25023
Table 4: Software Command Sequence
Command
Sequence
1st Bus
Write Cycle
2nd Bus
Write Cycle
3rd Bus
Write Cycle
4th Bus
Write Cycle
5th Bus
Write Cycle
6th Bus
Write Cycle
Addr
1
1. Address format A
14
-A
0
(Hex),
Addresses A
MS
-A
15
can be V
IL
or V
IH
, but no other value, for the Command sequence.
A
MS
= Most significant address
A
MS
= A
16
for SST39LF/VF010, A
17
for SST39LF/VF020, and A
18
for SST39LF/VF040
Data Addr
1
Data Addr
1
Data Addr
1
Data Addr
1
Data Addr
1
Data
Byte-Program 5555H AAH 2AAAH 55H 5555H A0H BA
2
2. BA = Program Byte address
Data
Sector-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SA
X
3
3. SA
X
for Sector-Erase; uses A
MS
-A
12
address lines
30H
Chip-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H
Software ID
Entry
4,5
4. The device does not remain in Software Product ID mode if powered down.
5. With A
MS
-A
1
= 0; SST Manufacturer’s ID = BFH, is read with A
0
= 0,
SST39LF/VF010 Device ID = D5H, is read with A
0
= 1,
SST39LF/VF020 Device ID = D6H, is read with A
0
= 1,
SST39LF/VF040 Device ID = D7H, is read with A
0
= 1.
5555H AAH 2AAAH 55H 5555H 90H
Software ID Exit
6
6. Both Software ID Exit operations are equivalent
XXH F0H
Software ID Exit
6
5555H AAH 2AAAH 55H 5555H F0H
T4.2 25023
©2012 Silicon Storage Technology, Inc. DS25023B 06/13
11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . -2.0V to V
DD
+2.0V
Voltage on A
9
Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions.
Certain with-Pb 32-PLCC package types are capable of 240
°C for 10 seconds; please consult the factory for the latest
information.
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
Table 5: Operating Range SST39LF010/020/040
Range Ambient Temp V
DD
Commercial 0°C to +70°C 3.0-3.6V
T5.1 25023
Table 6: Operating Range SST39VF010/020/040
Range Ambient Temp V
DD
Commercial 0°C to +70°C 2.7-3.6V
Industrial -40°C to +85°C 2.7-3.6V
T6.1 25023
Table 7: AC Conditions of Test
1
1. See Figures 13 and 14
Input Rise/Fall Time Output Load
5ns
C
L
= 30 pF for SST39LF010/020/040
C
L
= 100 pF for SST39VF010/020/040
T7.1 25023
©2012 Silicon Storage Technology, Inc. DS25023B 06/13
12
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Table 8: DC Operating Characteristics -V
DD
= 3.0-3.6V for SST39LF010/020/040 and 2.7-
3.6V for SST39VF010/020/040
1
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DD
Power Supply Current Address input=V
ILT
/V
IHT
, at f=1/T
RC
Min
V
DD
=V
DD
Max
Read
2
20 mA CE#=V
IL
, OE#=WE#=V
IH
, all I/Os open
Program and Erase
3
30 mA CE#=WE#=V
IL
, OE#=V
IH
I
SB
Standby V
DD
Current 15 µA CE#=V
IHC
, V
DD
=V
DD
Max
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
, V
DD
=V
DD
Max
I
LO
Output Leakage Current 10 µA V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.8 V V
DD
=V
DD
Min
V
IH
Input High Voltage 0.7V
DD
VV
DD
=V
DD
Max
V
IHC
Input High Voltage (CMOS) V
DD
-0.3 V V
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 µA, V
DD
=V
DD
Min
T8.7 25023
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
(room temperature), and V
DD
= 3V for VF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
3. 30 mA max for Erase operations in the industrial temperature range.
Table 9: Recommended System Power-up Timings
Symbol Parameter Minimum Units
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Power-up to Read Operation 100 µs
T
PU-WRITE
1
Power-up to Program/Erase Operation 100 µs
T9.1 25023
Table 10: Capacitance (Ta = 25°C, f=1 Mhz, other pins open)
Parameter Description Test Condition Maximum
C
I/O
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
I/O Pin Capacitance V
I/O
= 0V 12 pF
C
IN
1
Input Capacitance V
IN
= 0V 6 pF
T10.0 25023
Table 11: Reliability Characteristics
Symbol Parameter Minimum Specification Units Test Method
N
END
1,2
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
2. N
END
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating
would result in a higher minimum specification.
Endurance 10,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
T11.3 25023

SST39VF010-70-4I-WHE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 128K X 8 70ns
Lifecycle:
New from this manufacturer.
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