MT48H16M32L2F5-10 TR

PDF: 09005aef817f1b8c/Source: 09005aef818112f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb Mobile SDRAM_TwinDie_x32.fm - Rev. C 6/05 EN
7 ©2004 Micron Technology, Inc. All rights reserved.
512Mb : x32 TwinDie Mobile SDRAM Addendum
Electrical Specifications
Table 7: IDD Specifications and Conditions (V version)
VDD = +2.5 ±0.2V, VDDQ = +2.5 ±0.2V
Notes: 1, 5, 6, 11, 13; please refer to the 256Mb: x32 Mobile SDRAM data sheet for all notes.
MAX
Parameter/Condition Symbol -8 -10 Units Notes
Operating Current: Active Mode; Burst = 2; READ or
WRITE;
t
RC =
t
RC (MIN)
I
DD1 210 185 mA 3, 18, 19, 28
Standby Current: Power-Down Mode; All banks idle;
CKE = LOW
I
DD2N 800 800 µA 32
Standby Current: Power-Down Mode; All banks idle;
CKE = HIGH
I
DD2NS 60 60 mA
Standby Current: Active Mode; CKE = HIGH; CS# = HIGH;
All banks active after
t
RCD met; No accesses in progress
I
DD3NS 80 80 mA 3, 12, 19, 28
Standby Current: Active Mode; CKE = LOW; CS# = HIGH;
All banks active; No accesses in progress
I
DD3N 60 60 mA
Operating Current: Burst Mode; Continuous burst;
READ or WRITE; All banks active, half DQs toggling
every cycle.
I
DD4 165 140 mA 3, 18, 19, 28
Auto Refresh Current
CKE = HIGH; CS# = HIGH
t
RFC =
t
RFC
(MIN)
IDD5 300 250 mA 3, 12, 18, 19,
28, 29
t
RFC = 7.8µs
IDD65.05.0mA
Deep power down
I
ZZ 20 20 µA
Table 8: IDD Specifications and Conditions (H version)
VDD = 1.8 ±0.1V, VDDQ = 1.8V ±0.1V
Notes: 1, 5, 6, 11, 13; please refer to the 256Mb: x32 Mobile SDRAM data sheet for all notes.
MAX
Parameter/Condition Symbol -8 -10 Units Notes
Operating Current: Active Mode; Burst = 2; READ or
WRITE;
t
RC =
t
RC (MIN)
I
DD1 155 130 mA 3, 18, 19, 28
Standby Current: Power-Down Mode; All banks idle;
CKE = LOW
I
DD2N 600 600 µA 32
Standby Current: Power-Down Mode; All banks idle;
CKE = HIGH
I
DD2NS 40 40 mA
Standby Current: Active Mode; CKE = HIGH; CS# = HIGH;
All banks active after
t
RCD met; No accesses in progress
I
DD3NS 60 60 mA 3, 12, 19, 28
Standby Current: Active Mode; CKE = LOW; CS# = HIGH;
All banks active; No accesses in progress
I
DD3N 40 40 mA
Operating Current: Burst Mode; Continuous burst;
READ or WRITE; All banks active, half DQs toggling
every cycle.
I
DD4 115 95 mA 3, 18, 19, 28
Auto Refresh Current
CKE = HIGH; CS# = HIGH
t
RFC =
t
RFC
(MIN)
I
DD5 245 205 mA 3, 12, 18, 19,
28, 29
t
RFC = 7.8µs
I
DD65.05.0mA
Deep power down
I
ZZ 20 20 µA
PDF: 09005aef817f1b8c/Source: 09005aef818112f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb Mobile SDRAM_TwinDie_x32.fm - Rev. C 6/05 EN
8 ©2004 Micron Technology, Inc. All rights reserved.
512Mb : x32 TwinDie Mobile SDRAM Addendum
I
DD
7 Curves
IDD7 Curves
Figure 3: Typical Self Refresh Current vs. Temperature – 3.3V Part
Table 9: I
DD7 - Self Refresh Current Options
Note: 4; please refer to the 256Mb: x32 Mobile SDRAM data sheet for all notes. Values for IDD7 for 85ºC are
100 percent tested. Values for 70ºC, 45ºC, and 15ºC are sampled only.
Temperature Compensated Self
Refresh Parameter/Condition
MAX
Temperature
VDD = 3.3 VDD = 2.5 VDD = 1.8 Units Notes
Self Refresh Current:
CKE = LOW – 4 Bank Refresh
85ºC 1600 1600 1200 µA 4
70ºC 1300 1300 960 µA 4
45ºC 1000 1000 740 µA 4
15ºC 864 864 630 µA 4
Self Refresh Current:
CKE = LOW – 2 Bank Refresh
85ºC 1200 1200 900 µA 4
70ºC 1025 1025 760 µA 4
45ºC 875 875 640 µA 4
15ºC 800 800 580 µA 4
Self Refresh Current:
CKE = LOW – 1 Bank Refresh
85ºC 1000 1000 750 µA 4
70ºC 900 900 660 µA 4
45ºC 800 800 590 µA 4
15ºC 760 760 560 µA 4
Self Refresh Current:
CKE = LOW – Half Bank Refresh
85ºC 900 900 680 µA 4
70ºC 825 825 610 µA 4
45ºC 780 780 566 µA 4
15ºC 750 750 540 µA 4
Self Refresh Current:
CKE = LOW – Quarter Bank Refresh
85ºC 850 850 640 µA 4
70ºC 800 800 590 µA 4
45ºC 760 760 550 µA 4
15ºC 740 740 536 µA 4
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
-40 -30 -20 -10 0 10 20 30 40 50 607080
Temperature (C)
Currrent (uA)
IDD7-- 4-Bank
IDD7-- 2-Bank
IDD7-- 1-Bank
IDD7-- 1/2-Bank
IDD7-- 1/4-Bank
PDF: 09005aef817f1b8c/Source: 09005aef818112f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb Mobile SDRAM_TwinDie_x32.fm - Rev. C 6/05 EN
9 ©2004 Micron Technology, Inc. All rights reserved.
512Mb : x32 TwinDie Mobile SDRAM Addendum
I
DD
7 Curves
Figure 4: Typical Self Refresh Current vs. Temperature – 2.5V Part
Figure 5: Typical Self Refresh Current vs. Temperature – 1.8V Part
Table 10: Capacitance
Parameter – FBGA “S2” Package Symbol MIN MAX Units
Input Capacitance: CLK
C
I1 58pF
Input Capacitance: All other input-only balls
C
I2 58pF
Input/Output Capacitance: DQs
C
IO 812pF
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
-40 -30 -20 -10 0 10 20 30 40 50 607080
Temperature (C)
Currrent (uA)
IDD7-- 4-Bank
IDD7-- 2-Bank
IDD7-- 1-Bank
IDD7-- 1/2-Bank
IDD7-- 1/4-Bank
0
100
200
300
400
500
600
700
800
900
1000
-40 -30 -20 -10 0 10 20 30 40 50 607080
Temperature (C)
Currrent (uA)
IDD7-- 4-Bank
IDD7-- 2-Bank
IDD7-- 1-Bank
IDD7-- 1/2-Bank
IDD7-- 1/4-Bank

MT48H16M32L2F5-10 TR

Mfr. #:
Manufacturer:
Micron
Description:
IC DRAM 512M PARALLEL 90VFBGA
Lifecycle:
New from this manufacturer.
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