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LTC4444HMS8E#PBF

P1-P3P4-P6P7-P9P10-P12P13-P14
LTC4444
4
4444fb
TYPICAL PERFORMANCE CHARACTERISTICS
V
CC
Supply Quiescent Current
vs Voltage
BOOST-TS Supply Quiescent
Current vs Voltage
V
CC
Supply Current
vs Temperature
Boost Supply Current
vs Temperature
Output Low Voltage (V
OL
)
vs Supply Voltage
Output High Voltage (V
OH
)
vs Supply Voltage
Input Thresholds (TINP, BINP)
vs Supply Voltage
Input Thresholds (TINP, BINP)
vs Temperature
Input Thresholds (TINP, BINP)
Hysteresis vs Voltage
V
CC
SUPPLY VOLTAGE (V)
0
0
QUIESCENT CURRENT (µA)
50
150
200
250
6 7 8 9 10 11 12 13
450
4444 G01
100
12345 14
300
350
400
TINP = BINP = 0V
TINP(BINP) = 12V
T
A
= 25°C
BOOST = 12V
TS = GND
BOOST SUPPLY VOLTAGE (V)
0
0
QUIESCENT CURRENT (µA)
50
150
200
250
6 7 8 9 10 11 12 13
400
4444 G02
100
12345 14
300
350
TINP = BINP = 0V
TINP = 0V, BINP = 12V
TINP = 12V, BINP = 0V
T
A
= 25°C
V
CC
= 12V
TS = GND
TEMPERATURE (°C)
V
CC
SUPPLY CURRENT (µA)
350
360
370
4444 G03
330
300
–55 –25 5 35 65 95 125 150
380
340
320
310
TINP = BINP = 0V
V
CC
= BOOST = 12V
TS = GND
TINP(BINP) = 12V
TEMPERATURE (°C)
BOOST SUPPLY CURRENT (µA)
250
300
350
4444 G04
150
0
400
200
100
50
TINP = 12V
BINP = 0V
TINP = 0V
BINP = 12V
TINP = BINP = 0V
V
CC
= BOOST = 12V
TS = GND
–55 –25 5 35 65 95 125 150
SUPPLY VOLTAGE (V)
7
OUTPUT VOLTAGE (mV)
140
10
4444 G05
80
40
89 11
20
0
160
120
100
60
12 13 14
V
OL(TG)
V
OL(BG)
T
A
= 25°C
I
TG(BG)
= 100mA
BOOST = V
CC
TS = GND
SUPPLY VOLTAGE (V)
7
5
TG OR BG OUTPUT VOLTAGE (V)
6
8
9
10
15
12
9
11
12
4444 G06
7
13
–1mA
14
11
8
10
13
14
T
A
= 25°C
BOOST = V
CC
TS = GND
–10mA
–100mA
SUPPLY VOLTAGE (V)
7
2.1
TG OR BG INPUT THRESHOLD (V)
2.2
2.4
2.5
2.6
3.1
2.8
9
11
12
4444 G07
2.3
2.9
3.0
2.7
8
10
13
14
T
A
= 25°C
BOOST = V
CC
TS = GND
V
IH(TG,BG)
V
IL(TG,BG?)
SUPPLY VOLTAGE (V)
78
375
TG OR BG INPUT THRESHOLD HYSTERESIS (mV)
425
500
9
11
12
4444 G09
400
475
450
10
13
14
T
A
= 25°C
V
CC
= BOOST = 12V
TS = GND
–55 –25 5 35 65 95 125 150
TEMPERATURE (°C)
TG OR BG INPUT THRESHOLD (V)
2.6
2.8
3.0
4444 G08
2.4
2.2
2.5
2.7
2.9
2.3
2.1
2.0
V
CC
= BOOST = 12V
TS = GND
V
IH(TG,BG)
V
IL(TG,BG)
LTC4444
5
4444fb
TYPICAL PERFORMANCE CHARACTERISTICS
Input Thresholds (TINP, BINP)
Hysteresis vs Temperature
V
CC
Undervoltage Lockout
Thresholds vs Temperature
Rise and Fall Time
vs V
CC
Supply Voltage
Rise and Fall Time
vs Load Capacitance
Peak Driver (TG, BG) Pull-Up
Current vs Temperature
Output Driver Pull-Down
Resistance vs Temperature
Propagation Delay
vs V
CC
Supply Voltage
Propagation Delay vs Temperature
TEMPERATURE (°C)
375
TG OR BG INPUT THRESHOLD HYSTERESIS (mV)
425
500
4444 G10
400
475
450
V
CC
= BOOST = 12V
TS = GND
–55 –25 5 35 65 95 125 150
–55 –25 5 35 65 95 125 150
TEMPERATURE (°C)
6.0
V
CC
SUPLLY VOLTAGE (V)
6.1
6.3
6.4
6.5
6.7
4444 G11
6.2
6.6
RISING THRESHOLD
FALLING THRESHOLD
BOOST = V
CC
TS = GND
SUPPLY VOLTAGE (V)
7
RISE/FALL TIME (ns)
12
28
30
22
26
32
9
11
12
4444 G12
8
20
16
10
24
6
18
14
8
10
13
14
T
A
= 25°C
BOOST = V
CC
TS = GND
C
L
= 3.3nF
t
r(TG)
t
r(BG)
t
f(TG)
t
f(BG)
LOAD CAPACITANCE (nF)
1
RISE/FALL TIME (ns)
40
50
60
9
4444 G13
30
20
0
3
5
7
210
4
6
8
10
80
70
t
r(TG)
t
r(BG)
t
f(TG)
t
f(BG)
T
A
= 25°C
V
CC
= BOOST = 12V
TS = GND
–55 –25 5 35 65 95 125 150
TEMPERATURE (°C)
2.0
PULL-UP CURRENT (A)
2.2
2.6
2.8
3.0
3.4
4444 G14
2.4
3.2
I
PU(BG)
I
PU(TG)
V
CC
= BOOST = 12V
TS = GND
TEMPERATURE (°C)
OUTPUT DRIVER PULL-DOWN RESISTACNE ()
1.2
1.6
2.0
2.2
4444 G15
0.8
0.4
1.0
1.4
1.8
0.6
0.2
V
CC
= 14V
V
CC
= 7V
R
DS(TG)
R
DS(BG)
BOOST-TS = 7V
–55 –25 5 35 65 95 125 150
BOOST-TS = 12V
V
CC
= 12V
BOOST-TS = 14V
SUPPLY VOLTAGE (V)
7
10
PROPAGATION DELAY (ns)
12
16
18
20
30
24
9
11
12
4444 G16
14
26
28
22
8
10
13
14
T
A
= 25°C
BOOST = V
CC
TS = GND
t
PLH(TG)
t
PLH(BG)
t
PHL(BG)
t
PHL(TG)
–55 –25 5 35 65 95
125 150
TEMPERATURE (°C)
2
PROPAGATION DELAY (ns)
7
17
22
27
37
4444 G17
12
32
V
CC
= BOOST = 12V
TS = GND
t
PLH(TG)
t
PHL(TG)
t
PLH(BG)
t
PHL(BG)
LTC4444
6
4444fb
PIN FUNCTIONS
TYPICAL PERFORMANCE CHARACTERISTICS
Switching Supply Current
vs Input Frequency
Switching Supply Current
vs Load Capacitance
TINP (Pin 1): High Side Input Signal. Input referenced
to GND. This input controls the high side driver output
(TG).
BINP (Pin 2): Low Side Input Signal. This input controls
the low side driver output (BG).
V
CC
(Pin 3): Supply. This pin powers input buffers, logic
and the low side gate driver output directly and the high
side gate driver output through an external diode con-
nected between this pin and BOOST (Pin 6). A low ESR
ceramic bypass capacitor should be tied between this pin
and GND (Pin 9).
BG (Pin 4): Low Side Gate Driver Output (Bottom Gate).
This pin swings between V
CC
and GND.
NC (Pin 5): No Connect. No connection required.
BOOST (Pin 6): High Side Bootstrapped Supply. An ex-
ternal capacitor should be tied between this pin and TS
(Pin 8). Normally, a bootstrap diode is connected between
V
CC
(Pin 3) and this pin. Voltage swing at this pin is from
V
CC
– V
D
to V
IN
+ V
CC
– V
D
, where V
D
is the forward volt-
age drop of the bootstrap diode.
TG (Pin 7): High Side Gate Driver Output (Top Gate). This
pin swings between TS and BOOST.
TS (Pin 8): High Side MOSFET Source Connection (Top
Source).
GND (Exposed Pad Pin 9): Ground. Must be soldered to
PCB ground for optimal thermal performance.
SWITCHING FREQUENCY (kHz)
0
SUPPLY CURRENT (mA)
1.5
2.0
2.5
600
1000
4444 G18
1.0
0.5
0
200 400 800
3.0
3.5
4.0
I
BOOST
(TG SWITCHING)
I
BOOST
(BG SWITCHING)
I
VCC
(BG SWITCHING)
I
VCC
(TG SWITCHING)
T
A
= 25°C
V
CC
= BOOST = 12V
TS = GND
LOAD CAPACITANCE (nF)
1
SUPPLY CURRENT (mA)
10
100
1345
0.1
27896
10
4444 G19
I
VCC
(BG SWITCHING
AT 1MHz)
I
BOOST
(TG SWITCHING
AT 500kHz)
I
BOOST
(TG SWITCHING
AT 1MHz)
I
BOOST
(BG SWITCHING AT 1MHz OR 5OOkHz)
I
VCC
(BG SWITCHING
AT 500kHz)
I
VCC
(TG SWITCHING AT 500kHz)
I
VCC
(TG SWITCHING
AT 1MHz)
P1-P3P4-P6P7-P9P10-P12P13-P14

LTC4444HMS8E#PBF

Mfr. #:
Buy LTC4444HMS8E#PBF
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers Hi V Sync N-Ch MOSFET Drvr
Lifecycle:
New from this manufacturer.
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