BCR4CM-16LH-1#BB0 Datasheet BCR4CM-16LH-1#BB0 | P1-P3

R07DS0255EJ0200 Rev.2.00 Page 1 of 8

Feb 25, 2013

Preliminary Datasheet

BCR4CM-16LH

800V - 4A - Triac

Medium Power Use

Features

 I

T (RMS)

: 4 A

 V

DRM

: 800 V

 I

FGTI

, I

RGTI

, I

RGT III

: 35 mA or 10mA(I

GT

item:1)

 High Commutation

 The Product guaranteed maximum junction

temperature 150C

 Planar Type

Outline

2

,

4

1

3

1. T

1

Terminal

2. T

2

Terminal

3. Gate Terminal

4. T

2

Terminal

1

2

3

4

RENESAS Packa

g

e code:

PRSS0004A

A

-

A

(

Packa

g

e name:

TO-220

)

1

2

3

RENESAS Package code: PRSS0004AG-A

(Package name:

TO-220AB)

Applications

Switching mode power supply, small motor control, heater control, and other general purpose AC power control

applications

Maximum Ratings

Voltage class

Parameter Symbol

16

Unit

Repetitive peak off-state voltage

Note1

V

DRM

800 V

Non-repetitive peak off-state voltage

Note1

V

DSM

960 V

Parameter Symbol Ratings Unit Conditions

RMS on-state current I

T (RMS)

4 A Commercial frequency, sine full wave

360conduction, Tc = 132C

Note3

Surge on-state current I

TSM

30 A 60 Hz sinewave 1 full cycle, peak value,

non-repetitive

I

2

t for fusion I

2

t 3.7 A

2

s Value corresponding to 1 cycle of half

wave 60 Hz, surge on-state current

Peak gate power dissipation P

GM

3 W

Average gate power dissipation P

G (AV)

0.3 W

Peak gate voltage V

GM

10 V

Peak gate current I

GM

2 A

Junction Temperature Tj –40 to +150 C

Storage temperature Tstg –40 to +150 C

Mass — 2.1 g Typical value

R07DS0255EJ0200

Rev.2.00

Feb 25, 2013

BCR4CM-16LH Preliminary

R07DS0255EJ0200 Rev.2.00 Page 2 of 8

Feb 25, 2013

Electrical Characteristics

BCR4CM-16LH-1

(I

GT

item: 1)

BCR4CM-16LH

Parameter Symbol

Min. Typ. Max. Min. Typ. Max.

Unit Test conditions

Repetitive peak off-state current I

DRM

— — 2.0 — — 2.0 mA

Tj = 150C

V

DRM

applied

On-state voltage V

TM

— — 1.6 — — 1.6 V

Tc = 25C, I

TM

= 6 A

instantaneous

measurement

 V

FGT



— — 1.5 — — 1.5 V

 V

RGT



— — 1.5 — — 1.5 V

Gate trigger voltage

Note2

 V

RGT



— — 1.5 — — 1.5 V

Tj = 25C, V

D

= 6 V

R

L

= 6 , R

G

= 330 

 I

FGT



— — 10 — — 35 mA

 I

RGT



— — 10 — — 35 mA

Gate trigger curent

Note2

 I

RGT



— — 10 — — 35 mA

Tj = 25C, V

D

= 6 V

R

L

= 6 , R

G

= 330 

0.2 — — 0.2 — — V

Tj = 125C

V

D

= 1/2 V

DRM

Gate non-trigger voltage V

GD

0.1 — — 0.1 — — V

Tj = 150C

V

D

= 1/2 V

DRM

Thermal resistance R

th (j-c)

— — 3.3 — — 3.3 C/W

Junction to case

Note3,4

2.5 — — — — — A/ms

Tj = 125C

(dv/dt)c < 10 V/s

Critical-rate of decay of on-state

commutating current

Note5

(di/dt)c

— — — 3.0 — — A/ms

Tj = 125C

(dv/dt)c < 100 V/s

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T

2

tab 1.5 mm apart from the molded case.

4. The contact thermal resistance R

th (c-f)

in case of greasing is 1.0C/W.

5. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.

Test conditions Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Tj = 125C

2. Peak off-state voltage

V

D

= 400 V

2. Rate of rise of off-state commutating voltage

(dv/dt)c < 10 V/s (I

GT

item : 1)

(dv/dt)c < 100 V/s

Supply Voltage

Time

Main Current

Main Voltage

(di/dt)c

V

D

(dv/dt)c

BCR4CM-16LH Preliminary

R07DS0255EJ0200 Rev.2.00 Page 3 of 8

Feb 25, 2013

Performance Curve

10

3

10

2

10

1

–40 0 40 80 120 160

Maximum On-State Characteristics

On-State Voltage (V)

On-State Current (A)

Rated Surge On-State Current

Conduction Time (Cycles at 60Hz)

Surge On-State Current (A)

Gate Characteristics (I, II and III)

Gate Current (mA)

Gate Voltage (V)

Gate Trigger Voltage vs.

Junction Temperature

Junction Temperature (°C)

Gate Trigger Voltage (Tj = t°C)

Gate Trigger Voltage (Tj = 25°C)

× 100 (%)

Gate Trigger Current vs.

Junction Temperature

Junction Temperature (°C)

Gate Trigger Current (Tj = t°C)

Gate Trigger Current (Tj = 25°C)

× 100 (%)

Maximum Transient Thermal Impedance

Characteristics (Junction to case)

Conduction Time (Cycles at 60Hz)

Transient Thermal Impedance (°C/W)

4.00.5 1.5 2.5 3.51.0 2.0 3.0

10

2

10

1

10

0

10

−1

40

0

5

10

15

20

25

35

30

10

0

10

1

10

2

10

3

10

2

10

1

–40 0 40 80 120 160

Typical Example

I

RGT III

I

FGT I

I

RGT I

Typical Example

10

−1

10

0

10

1

10

2

10

1

10

2

10

3

10

4

P

GM

= 3W

I

GM

= 2A

V

D

= 6V

R

L

= 6Ω

V

D

= 6V

R

L

= 6Ω

V

GM

= 10V

V

GT

= 1.5V

I

GT

= 35mA

I

GT

item1 = 10mA

0

0.8

1.6

2.4

3.2

4.0

10

−1

10

0

10

1

10

2

10

2

10

3

10

4

Tj = 25°C

V

GD

= 0.1V

P

G(AV)

= 0.3W

BCR4CM-16LH-1#BB0

BCR4CM-16LH-1#BB0

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