Table 5: Pin Assignments (Continued)
244-Pin VLP Mini-RDIMM Front 244-Pin VLP Mini-RDIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
29 V
SS
60 V
DD
91 DQ40 122 SA1 151 DQ22 182 A8 213 DQ45 244 V
DDSPD
30 DQ18 61 A5 92 DQ41 152 DQ23 183 A6 214 V
SS
31 DQ19 62 A4 93 V
SS
153 V
SS
184 V
DDQ
215 DM5/
RDQS5
Note:
1. Pin 55 is NF for 512MB, BA2 for 1GB.
512MB, 1GB (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Pin Assignments
PDF: 09005aef83d09b45
hvf9c64_128x72pkz.pdf - Rev. C 4/14 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Pin Descriptions
The pin description table below is a comprehensive list of all possible pins for all DDR2
modules. All pins listed may not be supported on this module. See Pin Assignments for
information specific to this module.
Table 6: Pin Descriptions
Symbol Type Description
Ax Input Address inputs: Provide the row address for ACTIVE commands, and the column ad-
dress and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments Table for density-specific
addressing information.
BAx Input Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, and MR3) is loaded during the LOAD MODE command.
CKx,
CK#x
Input Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.
CKEx Input Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circui-
try and clocks on the DDR2 SDRAM.
DMx Input Data mask (x8 devices only): DM is an input mask signal for write data. Input data
is masked when DM is sampled HIGH, along with that input data, during a write ac-
cess. Although DM pins are input-only, DM loading is designed to match that of the
DQ and DQS pins.
ODTx Input On-die termination: Enables (registered HIGH) and disables (registered LOW) termi-
nation resistance internal to the DDR2 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input
will be ignored if disabled via the LOAD MODE command.
Par_In Input Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.
RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.
RESET# Input Reset: Asynchronously forces all registered outputs LOW when RESET# is LOW. This
signal can be used during power-up to ensure that CKE is LOW and DQ are High-Z.
S#x Input Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.
SAx Input Serial address inputs: Used to configure the SPD EEPROM address range on the I
2
C
bus.
SCL Input Serial clock for SPD EEPROM: Used to synchronize communication to and from the
SPD EEPROM on the I
2
C bus.
CBx I/O Check bits. Used for system error detection and correction.
DQx I/O Data input/output: Bidirectional data bus.
DQSx,
DQS#x
I/O Data strobe: Travels with the DQ and is used to capture DQ at the DRAM or the con-
troller. Output with read data; input with write data for source synchronous opera-
tion. DQS# is only used when differential data strobe mode is enabled via the LOAD
MODE command.
512MB, 1GB (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Pin Descriptions
PDF: 09005aef83d09b45
hvf9c64_128x72pkz.pdf - Rev. C 4/14 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 6: Pin Descriptions (Continued)
Symbol Type Description
SDA I/O Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on
the I
2
C bus.
RDQSx,
RDQS#x
Output Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS
is output with read data only and is ignored during write data. When RDQS is disa-
bled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled
and differential data strobe mode is enabled.
Err_Out# Output
(open drain)
Parity error output: Parity error found on the command and address bus.
V
DD
/V
DDQ
Supply Power supply: 1.8V ±0.1V. The component V
DD
and V
DDQ
are connected to the mod-
ule V
DD
.
V
DDSPD
Supply SPD EEPROM power supply: 1.7–3.6V.
V
REF
Supply Reference voltage: V
DD
/2.
V
SS
Supply Ground.
NC No connect: These pins are not connected on the module.
NF No function: These pins are connected within the module, but provide no functional-
ity.
NU Not used: These pins are not used in specific module configurations/operations.
RFU Reserved for future use.
512MB, 1GB (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Pin Descriptions
PDF: 09005aef83d09b45
hvf9c64_128x72pkz.pdf - Rev. C 4/14 EN
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

MT9HVF6472PKZ-667G1

Mfr. #:
Manufacturer:
Micron
Description:
DRAM Module DDR2 SDRAM 512Mbyte 244MiniRDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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