VS-6CWQ10FNTRR-M3

VS-6CWQ10FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Nov-16
1
Document Number: 93318
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 3.5 A
FEATURES
Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
Popular D-PAK outline
Center tap configuration
Small foot print, surface mountable
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-6CWQ10FN-M3 surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
2 x 3.5 A
V
R
100 V
V
F
at I
F
See Electrical table
I
RM
4.9 mA at 125 °C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
5 mJ
Base
common
cathode
Common
cathode
2
4
13
Anode Anode
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 7 A
V
RRM
100 V
I
FSM
t
p
= 5 μs sine 440 A
V
F
3 A
pk
, T
J
= 125 °C (per leg) 0.63 V
T
J
Range -40 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-6CWQ10FN-M3 UNITS
Maximum DC reverse voltage V
R
100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 135 °C, rectangular waveform
3.5
A
per device 7
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
440
10 ms sine or 6 ms rect. pulse 70
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 10 mH 5.0 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.5 A
VS-6CWQ10FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Nov-16
2
Document Number: 93318
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward
voltage drop per leg
See fig. 1
V
FM
(1)
3 A
T
J
= 25 °C
0.81
V
6 A 0.96
3 A
T
J
= 125 °C
0.63
6 A 0.74
Maximum reverse
leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
1
mA
T
J
= 125 °C 4.9
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.48 V
Forward slope resistance r
t
30.89 m
Typical junction capacitance per leg C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C 92 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 5.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
per leg
R
thJC
DC operation
See fig. 4
4.70
°C/W
per device 2.35
Approximate weight
0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 6CWQ10FN
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-6CWQ10FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Nov-16
3
Document Number: 93318
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
100
10
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
1.2
0.8
1.6
2.0
2.4
2.8
3.2
0.4
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.0001
0.1
1
10
0.01
0.001
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
4020 60 80
100
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
100
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
20 40 60
100
80
0
T
J
= 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C

VS-6CWQ10FNTRR-M3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D-PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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