PartNumber | 2SA1163-BL(TE85L,F | 2SA1162YT1 | 2SA1162GT1 |
Description | Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO | Bipolar Transistors - BJT 150mA 50V PNP | Bipolar Transistors - BJT 150mA 50V PNP |
Manufacturer | Toshiba | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | N | N |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-346-3 | SC-59-3 | SC-59-3 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | - 120 V | 50 V | 50 V |
Collector Base Voltage VCBO | - 120 V | 50 V | 50 V |
Emitter Base Voltage VEBO | - 5 V | 7 V | 7 V |
Collector Emitter Saturation Voltage | - 0.3 V | 0.3 V | 0.3 V |
Maximum DC Collector Current | - 100 mA | 0.15 A | 0.15 A |
Gain Bandwidth Product fT | 100 MHz | 80 MHz | 80 MHz |
Series | 2SA1163 | - | - |
DC Current Gain hFE Max | 700 | - | - |
Packaging | Reel | Reel | Reel |
Brand | Toshiba | ON Semiconductor | ON Semiconductor |
Continuous Collector Current | - 100 mA | 0.15 A | 0.15 A |
DC Collector/Base Gain hfe Min | 200 | 120 | 200 |
Pd Power Dissipation | 150 mW | 200 mW | 200 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Height | - | 1.09 mm | 1.09 mm |
Length | - | 2.9 mm | 2.9 mm |
Width | - | 1.5 mm | 1.5 mm |
Unit Weight | - | 0.000282 oz | 0.000282 oz |