PartNumber | 2SC5200N(S1,E,S) | 2SC5200-O(Q) |
Description | Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ | Bipolar Transistors - BJT NPN 230V 15A |
Manufacturer | Toshiba | Toshiba |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-3P-3 | TO-3P-3 |
Transistor Polarity | NPN | NPN |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 230 V | 230 V |
Collector Base Voltage VCBO | 230 V | 230 V |
Emitter Base Voltage VEBO | 5 V | 5 V |
Collector Emitter Saturation Voltage | 0.4 V | - |
Maximum DC Collector Current | 15 A | 15 A |
Gain Bandwidth Product fT | 30 MHz | 30 MHz |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | 2SC5200 | 2SC5200 |
DC Current Gain hFE Max | 160 | - |
Brand | Toshiba | Toshiba |
Continuous Collector Current | 15 A | - |
DC Collector/Base Gain hfe Min | 35 | 80 |
Pd Power Dissipation | 150 W | 150000 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 25 | 100 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.245577 oz | 0.239863 oz |
Height | - | 26 mm |
Length | - | 20.5 mm (Max) |
Width | - | 5.2 mm (Max) |