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| PartNumber | BSC066N06NS | BSC066N06NSATMA1 |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | PG-TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 64 A | 64 A |
| Rds On Drain Source Resistance | 6.6 mOhms | 6.6 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V |
| Vgs Gate Source Voltage | 10 V | 10 V |
| Qg Gate Charge | 17 nC | 17 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 46 W | 46 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm |
| Series | OptiMOS 5 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 32 S | 32 S |
| Fall Time | 3 ns | 3 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 3 ns | 3 ns |
| Factory Pack Quantity | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12 ns | 12 ns |
| Typical Turn On Delay Time | 7 ns | 7 ns |
| Part # Aliases | BSC066N06NSATMA1 SP001067000 | BSC066N06NS SP001067000 |
| Unit Weight | 0.003527 oz | 0.003527 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC066N06NS | MOSFET DIFFERENTIATED MOSFETS | |
| BSC066N06NSATMA1 | MOSFET MV POWER MOS | ||
| BSC066N06NS | MOSFET DIFFERENTIATED MOSFETS | ||
| BSC066N06NSATMA1 | MOSFET N-CH 60V 64A 8TDSON | ||
| BSC066N06NS , TDA8552TS/ | New and Original |