PartNumber | BSC094N06LS5ATMA1 | BSC096N10LS5ATMA1 | BSC094N03S G |
Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET TRENCH >=100V | MOSFET N-CH 30V 35A TDSON-8 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PG-TDSON-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 47 A | - | - |
Rds On Drain Source Resistance | 9.4 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 7 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 36 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | Reel | - |
Series | OptiMOS 5 | BSC096N10 | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 22 S | - | - |
Fall Time | 3 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3 ns | - | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 14 ns | - | - |
Typical Turn On Delay Time | 4 ns | - | - |
Part # Aliases | BSC094N06LS5 SP001458086 | BSC096N10LS5 SP001861036 | - |