 | | | |
| PartNumber | BSS169H6327XTSA1 | BSS169H6327XT | BSS169H6906XTSA1 |
| Description | MOSFET N-Ch 100V 90mA SOT-23-3 | MOSFET N-Ch 100V 90mA SOT-23-3 | MOSFET SMALL SIGNAL N-CH |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-SOT-23-3 | PG-SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 90 mA | 90 mA | 90 mA |
| Rds On Drain Source Resistance | 6 Ohms | 6 Ohms | 12 Ohms |
| Vgs th Gate Source Threshold Voltage | 2.9 V | 2.9 V | 2.9 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
| Qg Gate Charge | 2.1 nC | 2.1 nC | 2.8 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 360 mW | 360 mW | 360 mW |
| Configuration | Single | Single | Single |
| Channel Mode | Depletion | Depletion | Depletion |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 2.9 mm | 2.9 mm | 2.9 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
| Series | BSS169 | BSS169 | BSS169 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | SIPMOS Small Signal Transistor | SIPMOS Small Signal Transistor | SIPMOS Small Signal Transistor |
| Width | 1.3 mm | 1.3 mm | 1.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 0.1 S | 0.1 S | 0.1 S |
| Fall Time | 27 ns | 27 ns | 27 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.7 ns | 2.7 ns | 2.7 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 11 ns | 11 ns | 11 ns |
| Typical Turn On Delay Time | 2.9 ns | 2.9 ns | 2.9 ns |
| Part # Aliases | BSS169 BSS169H6327XT H6327 SP000702572 | BSS169 BSS169H6327XTSA1 H6327 SP000702572 | BSS169 H6906 SP000702582 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS169H6327XTSA1 | MOSFET N-Ch 100V 90mA SOT-23-3 | |
| BSS169H6327XT | MOSFET N-Ch 100V 90mA SOT-23-3 | ||
| BSS192PH6327FTSA1 | MOSFET P-Ch -250V -190mA SOT-89-3 | ||
| BSS169H6906XTSA1 | MOSFET SMALL SIGNAL N-CH | ||
| BSS192P H6327 | MOSFET P-Ch -250V -190mA SOT-89-3 | ||
| BSS192P H6327 | P-CH -250V -190mA 12Ohm SOT89 | ||
| BSS169H6327XTSA1 | MOSFET N-CH 100V 170MA SOT23 | ||
| BSS169H6906XTSA1 | MOSFET N-CH 100V 170MA SOT23 | ||
| BSS169L6327HTSA1 | MOSFET N-CH 100V 170MA SOT-23 | ||
| BSS192PE6327 | MOSFET P-CH 250V 0.19A SOT-89 | ||
| BSS192PH6327FTSA1 | MOSFET P-CH 250V 0.19A SOT-89 | ||
| BSS192PL6327HTSA1 | MOSFET P-CH 250V 0.19A SOT-89 | ||
| BSS169L6906HTSA1 | MOSFET N-CH 100V 170MA SOT-23 | ||
| BSS192PE6327T | MOSFET P-CH 250V 0.19A SOT-89 | ||
| BSS192PH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
Nexperia |
BSS192,115 | MOSFET TAPE-7 MOSFET | |
| BSS192,135 | MOSFET TAPE13 PWR-MOS | ||
| BSS192,115 | MOSFET P-CH 240V 0.2A SOT89 | ||
| BSS192,135 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
Infineon Technologies |
BSS192PH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSS192E-6327 | New and Original | ||
| BSS192.115 | Transistor: P-MOSFET, unipolar, -240V, -0.12A, 560mW, SOT89 | ||
| BSS169H6327 | RoHS(ship within 1day) | ||
| BSS169LT1G | New and Original | ||
| BSS17 | New and Original | ||
| BSS170 | New and Original | ||
| BSS192 | Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | ||
| BSS192 , ME6401C28-C18M6 | New and Original | ||
| BSS192 E6327 | New and Original | ||
| BSS192115 | Now Nexperia BSS192 - Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | ||
| BSS192E6327 | 150MA, 240V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET | ||
| BSS192P | New and Original | ||
| BSS192P BSS192 | New and Original | ||
| BSS192P L6327 | MOSFET P-Ch -250V 190mA SOT-89-3 | ||
| BSS192PL6327 | New and Original | ||
| BSS192T/R | New and Original | ||
| BSS192,115-CUT TAPE | New and Original | ||
| BSS169L6327 | New and Original |