PartNumber | BSS84-7-F | BSS8402DW-7 | BSS84-7 |
Description | MOSFET 50V 300mW | MOSFET 60 / -50V 200mW | MOSFET -50V 250mW |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | N | N |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-363-6 | SOT-23-3 |
Number of Channels | 1 Channel | 2 Channel | 1 Channel |
Transistor Polarity | P-Channel | N-Channel, P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 50 V | 70 V, 50 V | 50 V |
Id Continuous Drain Current | 130 mA | 115 mA | 130 mA |
Rds On Drain Source Resistance | 10 Ohms | 4.4 Ohms | 10 Ohms |
Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
Vgs Gate Source Voltage | 5 V | 20 V | 20 V |
Qg Gate Charge | 0.28 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 300 mW | 200 mW | 300 mW |
Configuration | Single | Dual | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 1 mm | 1 mm | 1 mm |
Length | 2.9 mm | 2.2 mm | 2.9 mm |
Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
Series | BSS84 | BSS8402DW | BSS84 |
Transistor Type | 1 P-Channel | 1 N-Channel, 1 P-Channel | 1 P-Channel |
Type | Enhancement Mode Field Effect Transistor | FET | FET |
Width | 1.3 mm | 1.35 mm | 1.3 mm |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Forward Transconductance Min | 0.05 S | 0.08 S, 0.05 S | 0.05 S |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 18 ns | 11 ns, 18 ns | 18 ns |
Typical Turn On Delay Time | 10 ns | 7 ns, 10 ns | 10 ns |
Unit Weight | 0.000282 oz | 0.000212 oz | 0.000282 oz |