PartNumber | BST39TA | BST40TA |
Description | Bipolar Transistors - BJT NPN High Voltage | Bipolar Transistors - BJT |
Manufacturer | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | N |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | SOT-89-3 | SOT-89-3 |
Transistor Polarity | NPN | NPN |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 350 V | 250 V |
Collector Base Voltage VCBO | 400 V | 300 V |
Emitter Base Voltage VEBO | 5 V | 5 V |
Collector Emitter Saturation Voltage | 0.5 V | - |
Maximum DC Collector Current | 0.5 A | 0.5 A |
Gain Bandwidth Product fT | 70 MHz | 70 MHz |
Minimum Operating Temperature | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | BST39 | BST40 |
DC Current Gain hFE Max | 40 | 40 at 20 mA, 10 V |
Height | 1.5 mm | 1.6 mm |
Length | 4.5 mm | 4.6 mm |
Packaging | Reel | - |
Width | 2.5 mm | 2.6 mm |
Brand | Diodes Incorporated | Diodes Incorporated |
Continuous Collector Current | 0.5 A | - |
DC Collector/Base Gain hfe Min | 40 | - |
Pd Power Dissipation | 1 W | 1000 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1000 | - |
Subcategory | Transistors | Transistors |
Unit Weight | 0.001834 oz | 0.004603 oz |