PartNumber | BTS282ZE3180AATMA2 | BTS282ZE3230AKSA2 |
Description | MOSFET N-Ch 49V 36A D2PAK-6 | MOSFET TEMPFET |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
Technology | Si | Si |
Mounting Style | SMD/SMT | Through Hole |
Package / Case | TO-263-7 | TO-220-7 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 49 V | 49 V |
Id Continuous Drain Current | 36 A | 80 A |
Rds On Drain Source Resistance | 6.5 mOhms | 5.8 mOhms |
Vgs th Gate Source Threshold Voltage | 1.6 V | 1.2 V |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 155 nC | 232 nC |
Minimum Operating Temperature | - 40 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C |
Pd Power Dissipation | 300 W | 300 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Tube |
Height | 4.4 mm | 15.65 mm |
Length | 10 mm | 10 mm |
Series | BTS282 | - |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 4.4 mm |
Brand | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 30 S | 30 S |
Fall Time | 36 ns | 36 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 37 ns | 37 ns |
Factory Pack Quantity | 1000 | 500 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 70 ns | 70 ns |
Typical Turn On Delay Time | 30 ns | 30 ns |
Part # Aliases | BTS282Z E3180A SP000910848 | BTS282Z E3230 SP000969786 |
Unit Weight | 0.056438 oz | 0.070548 oz |
RoHS | - | Y |