BTS282ZE3180A

BTS282ZE3180AATMA2 vs BTS282ZE3180A vs BTS282ZE3180AATMA1

 
PartNumberBTS282ZE3180AATMA2BTS282ZE3180ABTS282ZE3180AATMA1
DescriptionMOSFET N-Ch 49V 36A D2PAK-6Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETPower Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-7--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage49 V--
Id Continuous Drain Current36 A--
Rds On Drain Source Resistance6.5 mOhms--
Vgs th Gate Source Threshold Voltage1.6 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge155 nC--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReel-
Height4.4 mm--
Length10 mm--
SeriesBTS282BTS282-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min30 S--
Fall Time36 ns36 ns-
Product TypeMOSFET--
Rise Time37 ns37 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns70 ns-
Typical Turn On Delay Time30 ns30 ns-
Part # AliasesBTS282Z E3180A SP000910848--
Unit Weight0.056438 oz0.056438 oz-
Part Aliases-BTS282Z E3180A SP000910848-
Package Case-TO-263-7-
Pd Power Dissipation-300 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-36 A-
Vds Drain Source Breakdown Voltage-49 V-
Vgs th Gate Source Threshold Voltage-1.6 V-
Rds On Drain Source Resistance-6.5 mOhms-
Qg Gate Charge-155 nC-
Forward Transconductance Min-30 S-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BTS282ZE3180AATMA2 MOSFET N-Ch 49V 36A D2PAK-6
BTS282ZE3180AATMA2 MOSFET N-Ch 49V 36A D2PAK-6
BTS282ZE3180A Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BTS282ZE3180AATMA1 Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BTS282ZE3180ANTMA1 - Bulk (Alt: BTS282ZE3180ANTMA1)
BTS282ZE3180A/BTS282ZE3 New and Original
BTS282ZE3180AXT MOSFET N-Ch 49V 80A TO220-7
BTS282ZE3180AATMA2-CUT TAPE New and Original
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