PartNumber | BTS282ZE3180AATMA2 | BTS282ZE3180A | BTS282ZE3180AATMA1 |
Description | MOSFET N-Ch 49V 36A D2PAK-6 | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
Manufacturer | Infineon | Infineon Technologies | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-7 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 49 V | - | - |
Id Continuous Drain Current | 36 A | - | - |
Rds On Drain Source Resistance | 6.5 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 155 nC | - | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 300 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | - | - |
Length | 10 mm | - | - |
Series | BTS282 | BTS282 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 9.25 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 30 S | - | - |
Fall Time | 36 ns | 36 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 37 ns | 37 ns | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 70 ns | 70 ns | - |
Typical Turn On Delay Time | 30 ns | 30 ns | - |
Part # Aliases | BTS282Z E3180A SP000910848 | - | - |
Unit Weight | 0.056438 oz | 0.056438 oz | - |
Part Aliases | - | BTS282Z E3180A SP000910848 | - |
Package Case | - | TO-263-7 | - |
Pd Power Dissipation | - | 300 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 36 A | - |
Vds Drain Source Breakdown Voltage | - | 49 V | - |
Vgs th Gate Source Threshold Voltage | - | 1.6 V | - |
Rds On Drain Source Resistance | - | 6.5 mOhms | - |
Qg Gate Charge | - | 155 nC | - |
Forward Transconductance Min | - | 30 S | - |