 |  | | |
| PartNumber | CMLDM5757 TR | CMLDM5757 | CMLDM5757TR |
| Description | MOSFET Small Signal Mosfet Dual P Channel | ||
| Manufacturer | Central Semiconductor | Central Semiconductor Corp | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-563 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 430 mA | - | - |
| Rds On Drain Source Resistance | 900 mOhms, 900 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 1.2 nC | - | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 350 mW | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | CMLDM5 | CMLDM5 | - |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Brand | Central Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 48 ns | 48 ns | - |
| Typical Turn On Delay Time | 38 ns | 38 ns | - |
| Part # Aliases | CMLDM5757 PBFREE TR | - | - |
| Unit Weight | 0.000106 oz | 0.000289 oz | - |
| Package Case | - | SOT-563, SOT-666 | - |
| Operating Temperature | - | -65°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-563 | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 350mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 175pF @ 16V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 430mA | - |
| Rds On Max Id Vgs | - | 900 mOhm @ 430mA, 4.5V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 1.2nC @ 4.5V | - |
| Pd Power Dissipation | - | 350 mW | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 430 mA | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Rds On Drain Source Resistance | - | 2 Ohms | - |
| Qg Gate Charge | - | 1.2 nC | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Central Semiconductor |
CMLDM5757 TR | MOSFET Small Signal Mosfet Dual P Channel | |
| CMLDM5757 | New and Original | ||
| CMLDM5757TR | New and Original | ||
Central Semiconductor |
CMLDM5757 TR | Darlington Transistors MOSFET Small Signal Mosfet Dual P Channel |