CSD16406

CSD16406Q3 vs CSD16406

 
PartNumberCSD16406Q3CSD16406
DescriptionMOSFET N-Ch NexFET Power MOSFETs
ManufacturerTexas InstrumentsTI
Product CategoryMOSFETFETs - Single
RoHSE-
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseVSON-Clip-8-
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage25 V-
Id Continuous Drain Current60 A-
Rds On Drain Source Resistance5.3 mOhms-
Vgs th Gate Source Threshold Voltage1.4 V-
Vgs Gate Source Voltage10 V-
Qg Gate Charge5.8 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation46 W-
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameNexFETNexFET
PackagingReelDigi-ReelR Alternate Packaging
Height1 mm-
Length3.3 mm-
SeriesCSD16406Q3NexFET
Transistor Type1 N-Channel Power MOSFET1 N-Channel
Width3.3 mm-
BrandTexas Instruments-
Fall Time4.8 ns4.8 ns
Product TypeMOSFET-
Rise Time12.9 ns12.9 ns
Factory Pack Quantity2500-
SubcategoryMOSFETs-
Typical Turn Off Delay Time8.5 ns8.5 ns
Typical Turn On Delay Time7.3 ns7.3 ns
Unit Weight0.001541 oz-
Package Case-8-PowerTDFN
Operating Temperature--55°C ~ 150°C (TJ)
Mounting Type-Surface Mount
Supplier Device Package-8-VSON (5x6)
FET Type-MOSFET N-Channel, Metal Oxide
Power Max-2.7W
Drain to Source Voltage Vdss-25V
Input Capacitance Ciss Vds-1100pF @ 12.5V
FET Feature-Standard
Current Continuous Drain Id 25°C-19A (Ta), 60A (Tc)
Rds On Max Id Vgs-5.3 mOhm @ 20A, 10V
Vgs th Max Id-2.2V @ 250μA
Gate Charge Qg Vgs-8.1nC @ 4.5V
Pd Power Dissipation-2.7 W
Vgs Gate Source Voltage-16 V
Id Continuous Drain Current-19 A
Vds Drain Source Breakdown Voltage-25 V
Vgs th Gate Source Threshold Voltage-1.7 V
Rds On Drain Source Resistance-5.9 mOhms
Qg Gate Charge-5.8 nC
Forward Transconductance Min-53 S
Manufacturer Part # Description RFQ
Texas Instruments
Texas Instruments
CSD16406Q3 MOSFET N-Ch NexFET Power MOSFETs
CSD16406 New and Original
CSD16406Q3 MOSFET N-CH 25V 60A 8-SON
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