PartNumber | CSD16406Q3 | CSD16406 |
Description | MOSFET N-Ch NexFET Power MOSFETs | |
Manufacturer | Texas Instruments | TI |
Product Category | MOSFET | FETs - Single |
RoHS | E | - |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | VSON-Clip-8 | - |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 25 V | - |
Id Continuous Drain Current | 60 A | - |
Rds On Drain Source Resistance | 5.3 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.4 V | - |
Vgs Gate Source Voltage | 10 V | - |
Qg Gate Charge | 5.8 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 46 W | - |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | NexFET | NexFET |
Packaging | Reel | Digi-ReelR Alternate Packaging |
Height | 1 mm | - |
Length | 3.3 mm | - |
Series | CSD16406Q3 | NexFET |
Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel |
Width | 3.3 mm | - |
Brand | Texas Instruments | - |
Fall Time | 4.8 ns | 4.8 ns |
Product Type | MOSFET | - |
Rise Time | 12.9 ns | 12.9 ns |
Factory Pack Quantity | 2500 | - |
Subcategory | MOSFETs | - |
Typical Turn Off Delay Time | 8.5 ns | 8.5 ns |
Typical Turn On Delay Time | 7.3 ns | 7.3 ns |
Unit Weight | 0.001541 oz | - |
Package Case | - | 8-PowerTDFN |
Operating Temperature | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | Surface Mount |
Supplier Device Package | - | 8-VSON (5x6) |
FET Type | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | 2.7W |
Drain to Source Voltage Vdss | - | 25V |
Input Capacitance Ciss Vds | - | 1100pF @ 12.5V |
FET Feature | - | Standard |
Current Continuous Drain Id 25°C | - | 19A (Ta), 60A (Tc) |
Rds On Max Id Vgs | - | 5.3 mOhm @ 20A, 10V |
Vgs th Max Id | - | 2.2V @ 250μA |
Gate Charge Qg Vgs | - | 8.1nC @ 4.5V |
Pd Power Dissipation | - | 2.7 W |
Vgs Gate Source Voltage | - | 16 V |
Id Continuous Drain Current | - | 19 A |
Vds Drain Source Breakdown Voltage | - | 25 V |
Vgs th Gate Source Threshold Voltage | - | 1.7 V |
Rds On Drain Source Resistance | - | 5.9 mOhms |
Qg Gate Charge | - | 5.8 nC |
Forward Transconductance Min | - | 53 S |