 |  | |
| PartNumber | CSD17312Q5 | CSD17312Q5A |
| Description | MOSFET 30V N-Channel NexFET Power MOSFET | |
| Manufacturer | Texas Instruments | - |
| Product Category | MOSFET | - |
| RoHS | E | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | VSON-Clip-8 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 100 A | - |
| Rds On Drain Source Resistance | 1.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 28 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 3.2 W | - |
| Configuration | Single | - |
| Tradename | NexFET | - |
| Packaging | Reel | - |
| Height | 1 mm | - |
| Length | 6 mm | - |
| Series | CSD17312Q5 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 5 mm | - |
| Brand | Texas Instruments | - |
| Forward Transconductance Min | 200 S | - |
| Product Type | MOSFET | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | - |
| Unit Weight | 0.004476 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Texas Instruments |
CSD17312Q5 | MOSFET 30V N-Channel NexFET Power MOSFET | |
| CSD17312Q5A | New and Original | ||
| CSD17312Q5 | RF Bipolar Transistors MOSFET 30V N-Channel NexFET Power MOSFET |