| PartNumber | CSD18535KCS | CSD18535KTTT | CSD18535KTT |
| Description | MOSFET 60V, N ch NexFET MOSFETG , single TO-220, 2mOhm 3-TO-220 -55 to 175 | MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 2mOhm 3-DDPAK/TO-263 -55 to 175 | MOSFET N-CH 60V 200A |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | E | N | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 279 A | 200 A | - |
| Rds On Drain Source Resistance | 2 mOhms | 2.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.4 V | 1.9 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 63 nC | 81 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 300 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | NexFET | NexFET | - |
| Packaging | Tube | Reel | - |
| Height | 16.51 mm | 4.7 mm | - |
| Length | 10.67 mm | 9.25 mm | - |
| Series | CSD18535KCS | CSD18535KTT | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.7 mm | 10.26 | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Forward Transconductance Min | 263 S | 263 S | - |
| Fall Time | 3 ns | 3 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3 ns | 3 ns | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 19 ns | 19 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Unit Weight | 0.063493 oz | - | - |
| Moisture Sensitive | - | Yes | - |