PartNumber | F20W60C3-7100 | F20SC6M | F20WT-5DDR-E |
Description | MOSFET Hi Switching Speed High Voltage | ||
Manufacturer | Shindengen | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | MTO-3P-3 | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 20 A | - | - |
Rds On Drain Source Resistance | 190 mOhms | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 87 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 75 W | - | - |
Packaging | Tube | - | - |
Brand | Shindengen | - | - |
Forward Transconductance Min | 8.7 S | - | - |
Fall Time | 60 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 60 ns | - | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 355 ns | - | - |
Typical Turn On Delay Time | 32 ns | - | - |