PartNumber | FDB120N10 | FDB120N10TM |
Description | MOSFET 100V N-Chan 12Mohm PowerTrench | |
Manufacturer | ON Semiconductor | - |
Product Category | MOSFET | - |
RoHS | Y | - |
Technology | Si | - |
Mounting Style | SMD/SMT | - |
Package / Case | TO-263-3 | - |
Number of Channels | 1 Channel | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | - |
Id Continuous Drain Current | 74 A | - |
Rds On Drain Source Resistance | 9.7 Ohms | - |
Vgs Gate Source Voltage | 20 V | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 175 C | - |
Pd Power Dissipation | 170 W | - |
Configuration | Single | - |
Channel Mode | Enhancement | - |
Tradename | PowerTrench | - |
Packaging | Reel | - |
Height | 4.83 mm | - |
Length | 10.67 mm | - |
Series | FDB120N10 | - |
Transistor Type | 1 N-Channel | - |
Type | Power Trench MOSFET | - |
Width | 9.65 mm | - |
Brand | ON Semiconductor / Fairchild | - |
Forward Transconductance Min | 105 S | - |
Fall Time | 15 ns | - |
Product Type | MOSFET | - |
Rise Time | 105 ns | - |
Factory Pack Quantity | 800 | - |
Subcategory | MOSFETs | - |
Typical Turn Off Delay Time | 39 ns | - |
Typical Turn On Delay Time | 27 ns | - |
Unit Weight | 0.046296 oz | - |