 | |
| PartNumber | FDB3632-F085 |
| Description | MOSFET 100V N-Channel PowerTrench MOSFET |
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V |
| Id Continuous Drain Current | 80 A |
| Rds On Drain Source Resistance | 7.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V |
| Vgs Gate Source Voltage | 20 V |
| Qg Gate Charge | 84 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd Power Dissipation | 310 W |
| Configuration | Single |
| Qualification | AEC-Q101 |
| Tradename | PowerTrench |
| Packaging | Reel |
| Height | 4.83 mm |
| Length | 10.67 mm |
| Series | FDB3632_F085 |
| Transistor Type | 1 N-Channel |
| Width | 9.65 mm |
| Brand | ON Semiconductor / Fairchild |
| Fall Time | 46 ns |
| Product Type | MOSFET |
| Rise Time | 39 ns |
| Factory Pack Quantity | 800 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 96 ns |
| Typical Turn On Delay Time | 30 ns |
| Part # Aliases | FDB3632_F085 |
| Unit Weight | 0.046296 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB3632-F085 | MOSFET 100V N-Channel PowerTrench MOSFET | |
ON Semiconductor |
FDB3632-F085 | MOSFET N-CH 100V 12A D2PAK |