PartNumber | FDMC8200 | FDMC8200S | FDMC8200S_F106 |
Description | MOSFET DUAL N-CHANNEL PowerTrench | MOSFET 30V Dual N-Channel PowerTrench MOSFET | MOSFET 2N-CH 30V 6A/8.5A 8MLP |
Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | Power-33-8 | Power-33-8 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 18 A | 18 A | - |
Rds On Drain Source Resistance | 16 mOhms | 20 mOhms | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 7.3 nC, 16 nC | 7.5 nC, 15.7 nC | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1.9 W, 2.2 W | 2.5 W | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | - | - |
Tradename | PowerTrench | PowerTrench SyncFET | - |
Packaging | Reel | Reel | Digi-ReelR |
Height | 0.8 mm | 0.8 mm | - |
Length | 3 mm | 3 mm | - |
Product | MOSFET Small Signal | - | - |
Series | FDMC8200 | FDMC8200S | PowerTrenchR |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Type | Power Trench MOSFET | - | - |
Width | 3 mm | 3 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Forward Transconductance Min | 29 S, 56 S | 43 S | - |
Fall Time | 1.3 ns, 6 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.1 ns, 4 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 35 ns, 38 ns | - | - |
Typical Turn On Delay Time | 11 ns, 13 ns | - | - |
Unit Weight | 0.006561 oz | 0.006561 oz | - |
Package Case | - | - | 8-PowerWDFN |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-MLP (3.3x3.3), Power33 |
FET Type | - | - | 2 N-Channel (Dual) |
Power Max | - | - | 700mW, 1W |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 660pF @ 15V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 6A, 8.5A |
Rds On Max Id Vgs | - | - | 20 mOhm @ 6A, 10V |
Vgs th Max Id | - | - | 3V @ 250μA |
Gate Charge Qg Vgs | - | - | 10nC @ 10V |