PartNumber | FDV304P | FDV304P-D87Z | FDV304 |
Description | MOSFET P-Ch Digital | MOSFET P-Ch Digital FET | |
Manufacturer | ON Semiconductor | ON Semiconductor | FAIRCHI |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
Id Continuous Drain Current | 460 mA | 460 mA | - |
Rds On Drain Source Resistance | 1.1 Ohms | 1.1 Ohms | - |
Vgs Gate Source Voltage | 8 V | 8 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 350 mW | 350 mW | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
Height | 1.2 mm | 1.2 mm | - |
Length | 2.9 mm | 2.9 mm | - |
Product | MOSFET Small Signal | MOSFET Small Signal | - |
Series | FDV304P | - | - |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Type | MOSFET | MOSFET | - |
Width | 1.3 mm | 1.3 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Forward Transconductance Min | 0.8 S | - | - |
Fall Time | 8 ns | 8 ns | 8 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 8 ns | 8 ns | 8 ns |
Factory Pack Quantity | 3000 | 10000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 55 ns | 55 ns | 55 ns |
Typical Turn On Delay Time | 6 ns | 6 ns | 6 ns |
Part # Aliases | FDV304P_NL | FDV304P_D87Z | - |
Unit Weight | 0.000282 oz | 0.000282 oz | 0.002116 oz |
Part Aliases | - | - | FDV304P_NL |
Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | SOT-23 |
FET Type | - | - | MOSFET P-Channel, Metal Oxide |
Power Max | - | - | 350mW |
Drain to Source Voltage Vdss | - | - | 25V |
Input Capacitance Ciss Vds | - | - | 63pF @ 10V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 460mA (Ta) |
Rds On Max Id Vgs | - | - | 1.1 Ohm @ 500mA, 4.5V |
Vgs th Max Id | - | - | 1.5V @ 250μA |
Gate Charge Qg Vgs | - | - | 1.5nC @ 4.5V |
Pd Power Dissipation | - | - | 350 mW |
Vgs Gate Source Voltage | - | - | - 8 V |
Id Continuous Drain Current | - | - | 460 mA |
Vds Drain Source Breakdown Voltage | - | - | - 25 V |
Rds On Drain Source Resistance | - | - | 1.1 Ohms |
Forward Transconductance Min | - | - | 0.8 S |