PartNumber | FF150R12KS4 | FF150R12KT3G | FF150R12KS4HOSA1 |
Description | IGBT Modules 1200V 150A DUAL | IGBT Modules N-CH 1.2KV 225A | IGBT MODULE VCES 1200V 150A |
Manufacturer | Infineon | Infineon | - |
Product Category | IGBT Modules | IGBT Modules | - |
RoHS | N | Y | - |
Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
Configuration | Dual | Dual | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
Collector Emitter Saturation Voltage | 3.2 V | 2.15 V | - |
Continuous Collector Current at 25 C | 225 A | 225 A | - |
Gate Emitter Leakage Current | 400 nA | 400 nA | - |
Pd Power Dissipation | 1.25 kW | 780 W | - |
Package / Case | 62 mm | 62 mm | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 125 C | + 125 C | - |
Packaging | Tray | Tray | - |
Height | 30.5 mm | 30.9 mm | - |
Length | 106.4 mm | 106.4 mm | - |
Width | 61.4 mm | 61.4 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | FF150R12KS4HOSA1 SP000100706 | FF150R12KT3GHOSA1 SP000100788 | - |
Unit Weight | - | 12 oz | - |