PartNumber | FQP4N80 | FQP4N90C | FQP4N90 |
Description | MOSFET 800V N-Channel QFET | MOSFET 900V N-Ch Q-FET advance C-Series | MOSFET 900V N-Channel QFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 900 V | 900 V |
Id Continuous Drain Current | 3.9 A | 4 A | 4.2 A |
Rds On Drain Source Resistance | 3.6 Ohms | 4.2 Ohms | 3.1 Ohms |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 130 W | 140 W | 140 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | QFET | QFET | - |
Packaging | Tube | Tube | Tube |
Height | 16.3 mm | 16.3 mm | 16.3 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FQP4N80 | FQP4N90C | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MOSFET | MOSFET | MOSFET |
Width | 4.7 mm | 4.7 mm | 4.7 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 3.8 S | 5 S | 3.5 S |
Fall Time | 35 ns | 35 ns | 40 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 45 ns | 50 ns | 70 ns |
Factory Pack Quantity | 1000 | 1000 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 35 ns | 40 ns | 45 ns |
Typical Turn On Delay Time | 16 ns | 25 ns | 25 ns |
Part # Aliases | FQP4N80_NL | - | FQP4N90_NL |
Unit Weight | 0.063493 oz | 0.063493 oz | 0.050717 oz |