GA05JT

GA05JT12-247 vs GA05JT01-46 vs GA05JT03-46

 
PartNumberGA05JT12-247GA05JT01-46GA05JT03-46
DescriptionMOSFET 1200V 15A StandardJFET SiC High Temperature JTMOSFET SiC High Temperature JT
ManufacturerGeneSiC SemiconductorGeneSiC SemiconductorGeneSiC Semiconductor
Product CategoryMOSFETJFETMOSFET
RoHSYYY
TechnologySiCSiCSiC
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-46-3TO-46-3
PackagingTubeBulkBulk
SeriesGA05JT12--
BrandGeneSiC SemiconductorGeneSiC SemiconductorGeneSiC Semiconductor
Product TypeMOSFET-MOSFET
Factory Pack Quantity305050
SubcategoryMOSFETs-MOSFETs
Unit Weight0.402300 oz--
Transistor Polarity-N-ChannelN-Channel
Configuration-SingleSingle
Vds Drain Source Breakdown Voltage-100 V300 V
Vgs Gate Source Breakdown Voltage-30 V-
Drain Source Current at Vgs=0-5.8 A-
Id Continuous Drain Current-9 A9 A
Rds On Drain Source Resistance-620 mOhms620 mOhms
Pd Power Dissipation-20 W20 W
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 225 C+ 225 C
Type-JFET-
Gate Source Cutoff Voltage-3.45 V-
Maximum Drain Gate Voltage-25 V-
Number of Channels--1 Channel
Vgs Gate Source Voltage--30 V
Qg Gate Charge--14.6 nC
Channel Mode--Enhancement
Fall Time--12.4 ns
Rise Time--6.6 ns
Typical Turn Off Delay Time--12 ns
Typical Turn On Delay Time--13 ns
Manufacturer Part # Description RFQ
GeneSiC Semiconductor
GeneSiC Semiconductor
GA05JT12-247 MOSFET 1200V 15A Standard
GA05JT01-46 JFET SiC High Temperature JT
GA05JT03-46 MOSFET SiC High Temperature JT
GA05JT12-247 TRANS SJT 1200V 5A
GA05JT12-263 Trans JFET N-CH 1200V 5A SiC 4-Pin(3+Tab) TO-263
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