 | | |
| PartNumber | GA05JT01-46 | GA05JT03-46 |
| Description | JFET SiC High Temperature JT | MOSFET SiC High Temperature JT |
| Manufacturer | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Product Category | JFET | MOSFET |
| RoHS | Y | Y |
| Technology | SiC | SiC |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-46-3 | TO-46-3 |
| Transistor Polarity | N-Channel | N-Channel |
| Configuration | Single | Single |
| Vds Drain Source Breakdown Voltage | 100 V | 300 V |
| Vgs Gate Source Breakdown Voltage | 30 V | - |
| Drain Source Current at Vgs=0 | 5.8 A | - |
| Id Continuous Drain Current | 9 A | 9 A |
| Rds On Drain Source Resistance | 620 mOhms | 620 mOhms |
| Pd Power Dissipation | 20 W | 20 W |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 225 C | + 225 C |
| Packaging | Bulk | Bulk |
| Type | JFET | - |
| Brand | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Gate Source Cutoff Voltage | 3.45 V | - |
| Maximum Drain Gate Voltage | 25 V | - |
| Factory Pack Quantity | 50 | 50 |
| Number of Channels | - | 1 Channel |
| Vgs Gate Source Voltage | - | 30 V |
| Qg Gate Charge | - | 14.6 nC |
| Channel Mode | - | Enhancement |
| Fall Time | - | 12.4 ns |
| Product Type | - | MOSFET |
| Rise Time | - | 6.6 ns |
| Subcategory | - | MOSFETs |
| Typical Turn Off Delay Time | - | 12 ns |
| Typical Turn On Delay Time | - | 13 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
GeneSiC Semiconductor |
GA05JT01-46 | JFET SiC High Temperature JT | |
| GA05JT03-46 | MOSFET SiC High Temperature JT |