PartNumber | IPB017N08N5 | IPB017N08N5ATMA1 |
Description | MOSFET N-Ch 80V 120A D2PAK-2 | MOSFET N-Ch 80V 120A D2PAK-2 |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 80 V | 80 V |
Id Continuous Drain Current | 120 A | 120 A |
Rds On Drain Source Resistance | 1.5 mOhms | 1.5 mOhms |
Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 223 nC | 223 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Pd Power Dissipation | 375 W | 375 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | OptiMOS | OptiMOS |
Packaging | Reel | Reel |
Height | 4.4 mm | 4.4 mm |
Length | 10 mm | 10 mm |
Series | OptiMOS 5 | OptiMOS 5 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 114 S | 114 S |
Fall Time | 37 ns | 37 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 36 ns | 36 ns |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 102 ns | 102 ns |
Typical Turn On Delay Time | 40 ns | 40 ns |
Part # Aliases | IPB017N08N5ATMA1 SP001132472 | IPB017N08N5 SP001132472 |
Unit Weight | - | 0.139332 oz |