IPB017N08N5

IPB017N08N5 vs IPB017N08N5ATMA1

 
PartNumberIPB017N08N5IPB017N08N5ATMA1
DescriptionMOSFET N-Ch 80V 120A D2PAK-2MOSFET N-Ch 80V 120A D2PAK-2
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V
Id Continuous Drain Current120 A120 A
Rds On Drain Source Resistance1.5 mOhms1.5 mOhms
Vgs th Gate Source Threshold Voltage2.2 V2.2 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge223 nC223 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation375 W375 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height4.4 mm4.4 mm
Length10 mm10 mm
SeriesOptiMOS 5OptiMOS 5
Transistor Type1 N-Channel1 N-Channel
Width9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min114 S114 S
Fall Time37 ns37 ns
Product TypeMOSFETMOSFET
Rise Time36 ns36 ns
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time102 ns102 ns
Typical Turn On Delay Time40 ns40 ns
Part # AliasesIPB017N08N5ATMA1 SP001132472IPB017N08N5 SP001132472
Unit Weight-0.139332 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB017N08N5 MOSFET N-Ch 80V 120A D2PAK-2
IPB017N08N5ATMA1 MOSFET N-Ch 80V 120A D2PAK-2
IPB017N08N5 MOSFET N-Ch 80V 120A D2PAK-2
IPB017N08N5ATMA1 RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2
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