IPB80N04S4-0

IPB80N04S4-03 vs IPB80N04S4-04

 
PartNumberIPB80N04S4-03IPB80N04S4-04
DescriptionMOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V
Id Continuous Drain Current80 A80 A
Rds On Drain Source Resistance3.3 mOhms4.2 mOhms
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge51 nC33 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation94 W71 W
ConfigurationSingleSingle
QualificationAEC-Q101AEC-Q101
TradenameOptiMOSOptiMOS
PackagingReelReel
Height4.4 mm4.4 mm
Length10 mm10 mm
SeriesOptiMOS-T2OptiMOS-T2
Transistor Type1 N-Channel1 N-Channel
Width9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon Technologies
Fall Time16 ns12 ns
Product TypeMOSFETMOSFET
Rise Time12 ns12 ns
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time14 ns9 ns
Typical Turn On Delay Time14 ns10 ns
Part # AliasesIPB80N04S403ATMA1 IPB8N4S43XT SP000671628IPB80N04S404ATMA1 IPB8N4S44XT SP000646178
Unit Weight0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB80N04S4-03 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2
IPB80N04S4-04 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2
IPB80N04S4-04 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2
IPB80N04S4-03 IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2
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