PartNumber | IPL65R1K0C6SATMA1 | IPL65R1K0C6 | IPL65R1K0C6S |
Description | MOSFET N-Ch 650V 4.2A ThinPAK 5x6 | ||
Manufacturer | Infineon | - | Infineon Technologies |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | ThinPAK-56-8 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Id Continuous Drain Current | 4.2 A | - | - |
Rds On Drain Source Resistance | 1 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 15 nC | - | - |
Minimum Operating Temperature | - 40 C | - | - 40 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 34.7 W | - | - |
Configuration | Single | - | Single |
Tradename | CoolMOS | - | CoolMOS |
Packaging | Reel | - | Reel |
Height | 1.1 mm | - | - |
Length | 6 mm | - | - |
Series | CoolMOS C6 | - | XPL65R1 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 5 mm | - | - |
Brand | Infineon Technologies | - | - |
Fall Time | 13.6 ns | - | 13.6 ns |
Product Type | MOSFET | - | - |
Rise Time | 5.2 ns | - | 5.2 ns |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 41 ns | - | 41 ns |
Typical Turn On Delay Time | 6.6 ns | - | 6.6 ns |
Part # Aliases | IPL65R1K0C6S SP001163084 | - | - |
Unit Weight | 0.002677 oz | - | - |
Part Aliases | - | - | IPL65R1K0C6S SP001163084 |
Package Case | - | - | SON-8 |
Pd Power Dissipation | - | - | 34.7 W |
Vgs Gate Source Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 4.2 A |
Vds Drain Source Breakdown Voltage | - | - | 650 V |
Vgs th Gate Source Threshold Voltage | - | - | 3 V |
Rds On Drain Source Resistance | - | - | 1 Ohms |
Qg Gate Charge | - | - | 15 nC |