IPL65R1K0C6

IPL65R1K0C6SATMA1 vs IPL65R1K0C6 vs IPL65R1K0C6S

 
PartNumberIPL65R1K0C6SATMA1IPL65R1K0C6IPL65R1K0C6S
DescriptionMOSFET N-Ch 650V 4.2A ThinPAK 5x6
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseThinPAK-56-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current4.2 A--
Rds On Drain Source Resistance1 Ohms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation34.7 W--
ConfigurationSingle-Single
TradenameCoolMOS-CoolMOS
PackagingReel-Reel
Height1.1 mm--
Length6 mm--
SeriesCoolMOS C6-XPL65R1
Transistor Type1 N-Channel-1 N-Channel
Width5 mm--
BrandInfineon Technologies--
Fall Time13.6 ns-13.6 ns
Product TypeMOSFET--
Rise Time5.2 ns-5.2 ns
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time41 ns-41 ns
Typical Turn On Delay Time6.6 ns-6.6 ns
Part # AliasesIPL65R1K0C6S SP001163084--
Unit Weight0.002677 oz--
Part Aliases--IPL65R1K0C6S SP001163084
Package Case--SON-8
Pd Power Dissipation--34.7 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--4.2 A
Vds Drain Source Breakdown Voltage--650 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--1 Ohms
Qg Gate Charge--15 nC
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPL65R1K0C6SATMA1 MOSFET N-Ch 650V 4.2A ThinPAK 5x6
IPL65R1K0C6SATMA1 MOSFET N-CH 8TSON
IPL65R1K0C6 New and Original
IPL65R1K0C6S New and Original
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