IPL65R1K0C6S

IPL65R1K0C6SATMA1 vs IPL65R1K0C6S

 
PartNumberIPL65R1K0C6SATMA1IPL65R1K0C6S
DescriptionMOSFET N-Ch 650V 4.2A ThinPAK 5x6
ManufacturerInfineonInfineon Technologies
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single
RoHSY-
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseThinPAK-56-8-
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V-
Id Continuous Drain Current4.2 A-
Rds On Drain Source Resistance1 Ohms-
Vgs th Gate Source Threshold Voltage3 V-
Vgs Gate Source Voltage30 V-
Qg Gate Charge15 nC-
Minimum Operating Temperature- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation34.7 W-
ConfigurationSingleSingle
TradenameCoolMOSCoolMOS
PackagingReelReel
Height1.1 mm-
Length6 mm-
SeriesCoolMOS C6XPL65R1
Transistor Type1 N-Channel1 N-Channel
Width5 mm-
BrandInfineon Technologies-
Fall Time13.6 ns13.6 ns
Product TypeMOSFET-
Rise Time5.2 ns5.2 ns
Factory Pack Quantity5000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time41 ns41 ns
Typical Turn On Delay Time6.6 ns6.6 ns
Part # AliasesIPL65R1K0C6S SP001163084-
Unit Weight0.002677 oz-
Part Aliases-IPL65R1K0C6S SP001163084
Package Case-SON-8
Pd Power Dissipation-34.7 W
Vgs Gate Source Voltage-30 V
Id Continuous Drain Current-4.2 A
Vds Drain Source Breakdown Voltage-650 V
Vgs th Gate Source Threshold Voltage-3 V
Rds On Drain Source Resistance-1 Ohms
Qg Gate Charge-15 nC
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPL65R1K0C6SATMA1 MOSFET N-Ch 650V 4.2A ThinPAK 5x6
IPL65R1K0C6SATMA1 MOSFET N-CH 8TSON
IPL65R1K0C6S New and Original
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