PartNumber | IPP60R210CFD7XKSA1 | IPP60R199CPXKSA1 | IPP60R1K4C6XKSA1 |
Description | MOSFET LOW POWER_NEW | MOSFET N-Ch 650V 16A TO220-3 CoolMOS CP | MOSFET N-Ch 650V 3.2A TO220-3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 12 A | 16 A | 3.2 A |
Rds On Drain Source Resistance | 210 mOhms | 180 mOhms | 1.26 Ohms |
Vgs th Gate Source Threshold Voltage | 3.5 V | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 23 nC | 43 nC | 9.4 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 64 W | 139 W | 28.4 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 7.5 ns | 5 ns | 20 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 16.5 ns | 5 ns | 7 ns |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 54 ns | 50 ns | 40 ns |
Typical Turn On Delay Time | 22 ns | 10 ns | 8 ns |
Part # Aliases | IPP60R210CFD7 SP001715660 | IPP60R199CP IPP6R199CPXK SP000084278 | IPP60R1K4C6XKSA1 SP000931536 |
Unit Weight | 0.074075 oz | 0.211644 oz | 0.211644 oz |
Tradename | - | CoolMOS | CoolMOS |
Height | - | 15.65 mm | 15.65 mm |
Length | - | 10 mm | 10 mm |
Series | - | CoolMOS CE | CoolMOS C6 |
Width | - | 4.4 mm | 4.4 mm |